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Three-dimensional and longitudinal one-time program memory

A memory, vertical technology, applied in the field of one-time programming memory, can solve the problems of OTP storage layer limit, increased chip cost, planarization difficulties, etc.

Inactive Publication Date: 2017-11-03
CHENGDU HAICUN IP TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When 3D-OTP H When the storage capacity exceeds 100Gb, the line width of its address line enters 1x nm, which requires the use of high-precision lithography technology (such as multiple exposure technology), which increases the cost of the chip
At the same time, as the number of OTP storage layers increases, planarization will become more and more difficult
Therefore, 3D-OTP H The number of OTP storage tiers is limited

Method used

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  • Three-dimensional and longitudinal one-time program memory
  • Three-dimensional and longitudinal one-time program memory
  • Three-dimensional and longitudinal one-time program memory

Examples

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Embodiment Construction

[0021] Figure 1A It is a three-dimensional longitudinal one-time programming memory (3D-OTP V ) of the z-x section. It contains a plurality of vertical OTP memory strings (abbreviated as OTP memory strings) 1A, 1B . . . located on the substrate circuit 0K and arranged side by side. Each OTP memory string 1A is perpendicular to the substrate 0 and contains a plurality of vertically stacked OTP memory cells 1aa-1ha.

[0022] The embodiment in this figure is an OTP array 10 . OTP array 10 is a collection of all memory cells that share at least one address line. It contains a plurality of vertically stacked horizontal address lines (word lines) 8a-8h. After etching a plurality of storage wells 2a-2d penetrating these horizontal address lines 8a-8h, the sidewalls of the storage wells 2a-2d are covered with a layer of anti-fuse films 6a-6d, and filled with conductor material to form vertical Straight address lines 4a-4d (bit lines). The conductor material may be a metallic mat...

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Abstract

The invention proposes a three-dimensional and longitudinal one-time program memory (3D-OTPV). The 3D-OTPV comprises a plurality of vertical storage strings, wherein the plurality of vertical storage strings are arranged on a substrate circuit in parallel, each vertical storage string is perpendicular to a substrate and comprises a plurality of OTP storage cells, the plurality of OTP storage cells are stacked, each storage cell comprises an anti-fuse film, and the anti-fuse film is irreversibly changed to a low-resistance state from a high-resistance state during programming.

Description

technical field [0001] The present invention relates to the field of integrated circuit memory, and more specifically to one-time program memory (OTP). Background technique [0002] Three-dimensional one-time-programmable memory (3D-OTP) is a monolithic semiconductor memory that contains multiple vertically stacked OTP memory cells. The memory cells of 3D-OTP are distributed in three-dimensional space, while the memory cells of traditional planar OTP are distributed in a two-dimensional plane. Compared with traditional OTP, 3D-OTP has the advantages of high storage density and low storage cost. In addition, 3D-OTP data has a long lifespan (>100 years), which is suitable for long-term storage of data. [0003] US Patent 5,835,396 (Inventor: Zhang Guobiao; Grant Date: November 10, 1998) discloses a 3D-OTP. The 3D-OTP chip includes a substrate and a plurality of OTP storage layers stacked on the circuit layer of the substrate. The transistors and their interconnections o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11578H10B43/20
CPCH10B43/20H10B20/25H01L27/0688G11C13/0004G11C13/0007G11C13/003G11C13/004G11C17/165G11C17/18G11C2013/0045G11C2213/15G11C2213/71G11C2213/73G11C17/16H01L23/5252H10B20/50
Inventor 张国飙
Owner CHENGDU HAICUN IP TECH
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