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Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device

A technology of photosensitive resin and resin mixture, which is applied in the field of photosensitive resin composition, and can solve problems such as poor heat resistance and increased thermosetting

Active Publication Date: 2017-11-07
ASAHI KASEI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in recent years, semiconductor devices with lower heat resistance than conventional products have been developed. Therefore, materials for forming surface protection films and interlayer insulating films are also required to lower the thermosetting temperature, and thermosetting properties at 300°C or lower are required. Heat curability at 250°C or less may increase

Method used

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  • Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device
  • Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device
  • Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device

Examples

Experimental program
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Effect test

Embodiment

[0409] Hereinafter, the present invention will be specifically described with reference to synthesis examples, examples, and comparative examples, but the present invention is not limited thereto.

[0410] In addition, the measurement conditions in an Example are as follows.

[0411]

[0412] By GPC, it calculated based on standard polystyrene (Showa Denko Co., Ltd. organic solvent system standard sample STANDARDSM-105). The GPC apparatus and measurement conditions used are as follows.

[0413] Pump: JASCO PU-980

[0414] Detector: JASCO RI-930

[0415] Column oven: JASCO CO-965 40°C

[0416] Column: Shodex KD-806M 2 in series

[0417] Mobile phase: 0.1 mol / l LiBr / N-methylpyrrolidone

[0418] Flow rate: 1.0ml / min

[0419]

[0420] The resin was dissolved in γ-butyrolactone at a solid content concentration of 37% by mass, and this was spin-coated on a silicon wafer, and the silicon wafer and the spin-coated film were prebaked on a heating plate at 120° C. In 180 seco...

Synthetic example 1

[0491]

[0492] 76.4 g (0.36 mol) of propyl gallate, 4,4'-bis(methoxy 67.9 g (0.28 mol) of methyl) biphenyl, 2.2 g (0.014 mol) of diethyl sulfate, 100 g of diglyme (hereinafter also referred to as "DMDG"), and dissolve the solid matter.

[0493] The mixed solution was heated to 140° C. in an oil bath, and it was confirmed that methanol was generated from the reaction liquid. The reaction solution was stirred directly at 140° C. for 5 hours.

[0494] Next, the reaction container was cooled in the air, and 150 g of tetrahydrofuran was added thereto and stirred. The above reaction diluent was added dropwise to 5L of water under high-speed stirring to disperse and precipitate the resin, which was recovered, washed with water, dehydrated, and vacuum-dried to obtain the resin (P1-1) with a yield of 76%. The weight average molecular weight by GPC of the resin (P1-1) synthesize|combined in this way was 10900 in terms of polystyrene. Dissolve P1-1 in a deuterated dimethyl sulfoxid...

Synthetic example 2

[0496]

[0497] Using 70.6 g (0.42 mol) of methyl 3,5-dihydroxybenzoate instead of propyl gallate in Synthesis Example 1, it synthesized similarly to Synthesis Example 1, and obtained resin (P1-2) in 78% yield. The weight average molecular weight by GPC of the synthesize|combined resin (P1-2) was 14600 in polystyrene conversion. In the same manner as the synthesis example, the obtained P1-2 was measured 1 H NMR spectrum as figure 2 shown.

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Abstract

The invention relates to a photosensitive resin composition, a method for producing a hardened relief pattern, a semiconductor device and a display device. Provided is a photosensitive resin composition which comprises: (A-1) a resin containing a structure represented by general formula (1); and (B) a photo-acid generating agent. In general formula (1), X, R1 to R7, m1 to m4, n1, n2, Y and W are each as defined in the description.

Description

[0001] This application is a divisional application of the application dated December 6, 2012, the application number is 2012800604496, and the title of the invention is "photosensitive resin composition, method for manufacturing cured relief pattern, semiconductor device and display device". technical field [0002] The present invention relates to photosensitive resin compositions used for forming relief patterns such as insulating materials for electronic components and passivation films, buffer coating films, and interlayer insulating films in semiconductor devices, and production of cured relief patterns using the same Method, semiconductor device and display device. Background technique [0003] Conventionally, polyimide resins and polybenzoxazole resins having excellent heat resistance, electrical properties, mechanical properties, etc. have been widely used as surface protection films and interlayer insulating films used in semiconductor devices. Since these resins h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/022G03F7/023G03F7/038G03F7/039G03F7/16G03F7/20G03F7/30G03F7/32G03F7/40H01L21/56H01L23/29C08G8/22C08G16/02C08G61/02C08G61/12C08L61/12C08L65/00
CPCC08G8/22C08G16/0225C08G61/02C08G61/12C08G61/127C08G2261/3424C08G2261/76C08L61/12C08L65/00G03F7/0045G03F7/022G03F7/0226G03F7/023G03F7/0233G03F7/0236G03F7/038G03F7/0382G03F7/0384G03F7/039G03F7/0392G03F7/162G03F7/2004G03F7/30G03F7/322G03F7/40H01L21/56H01L23/293Y10S430/1055
Inventor 涩井智史平田龙也佐佐木隆弘山田泰辅
Owner ASAHI KASEI KK