Test structure and its formation method and test method
A technology of test structure and test method, applied in semiconductor/solid-state device testing/measurement, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as difficult metal bridging, short-circuit of interconnection structure, etc., to improve the accuracy rate Effect
Active Publication Date: 2020-03-10
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF13 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] Metal bridge is one of the main defects in the fabrication process of the interconnection structure of semiconductor devices. Metal bridges cause unnecessary short circuits in the interconnection structure.
However, the test structure provided by the existing technology is difficult to effectively locate the position where the metal bridging defect occurs
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] It can be seen from the background art that it is difficult to effectively locate the location of the metal bridging defect with the test structure provided by the prior art.
[0031] Usually, the method for utilizing the test structure to find a defect (defect) mainly includes the following steps: first, measure the I-V curve diagram of the test structure, and know whether there is a short circuit (short) defect in the test structure according to the measured I-V curve diagram; S2, after knowing that there is a short-circuit defect in the test structure, carry out OBARCH analysis to the test structure to obtain a hot spot (hotspot); step S3, remove the upper metal layer in the test structure until the metal layer where the hot spot is exposed; step S4, use an electron microscope in The hotspot area searches for a bridging (bridge) position; Step S5, performs FIB (Focused Ion Beam) cutting and observation processing on the test structure, and finds the bridging position ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a test structure, a formation method thereof and a test method. The test structure comprises a substrate, a first conductive layer, a second conductive layer, a third conductive layer, a first test pad and a second test pad; the first conductive layer is located on the surface of the substrate; the second conductive layer is located on the first conductive layer; the second conductive layer comprises a first sub-conductive layer and a second sub-conductive layer which are electrically insulated from each other, wherein the first sub-conductive layer comprises a plurality of discrete first metal layers, and the second sub-conductive layer is connected with the first conductive layer through a first conductive plug; the third conductive layer is located on the second conductive layer and is of a comb-shaped structure which comprises a first comb handle portion and discrete first comb tooth portions connected with the first comb handle portion, wherein the discrete first comb tooth portions are connected with the discrete first metal layers through a second conductive plug; the first test pad is connected with the first comb handle portion; and the second test pad is connected with the first conductive layer or the second sub-conductive layer. The correctness of positioning bridge connection defects in the test structure can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a testing structure, a forming method and a testing method thereof. Background technique [0002] In the field of semiconductor manufacturing, with the development of technology, the size of semiconductor devices is getting smaller and higher, and the complexity is getting higher and higher. In order to monitor the manufacturing process of semiconductor devices and ensure the reliability of semiconductor devices, the usual practice is A test structure (test key) is formed in the semiconductor device for testing and simulating some key parameters of the semiconductor device, so as to ensure the quality of the semiconductor device when it leaves the factory. [0003] The test structure is usually manufactured in the same semiconductor process as the semiconductor device in the wafer, and the test structure and the semiconductor device have a mutual correspondenc...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L23/544
CPCH01L22/10H01L22/20H01L22/32
Inventor 吴湘君谢涛虞勤琴李明
Owner SEMICON MFG INT (SHANGHAI) CORP