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Embedded non-volatile memory and current comparison readout circuit thereof

A non-volatile memory and readout circuit technology, which is applied in static memory, read-only memory, information storage, etc., can solve the problem of low reliability of the readout circuit and achieve the effect of improving readout reliability

Inactive Publication Date: 2017-12-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0014] It can be seen that the above two current comparison readout circuits have problems such as low reliability of the readout circuit.

Method used

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  • Embedded non-volatile memory and current comparison readout circuit thereof
  • Embedded non-volatile memory and current comparison readout circuit thereof
  • Embedded non-volatile memory and current comparison readout circuit thereof

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Embodiment Construction

[0036] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0037] Image 6 It is a structural schematic diagram of an embedded non-volatile memory of the present invention, such as Image 6 As shown, an embedded nonvolatile memory of the present invention includes a memory array (Memory array) 101, row decoding (not shown), CMUX circuit (selection circuit after column decoding) 102, current comparison readout circuit (Current comparator) 103, each...

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Abstract

The invention discloses an embedded non-volatile memory and a current comparison readout circuit thereof. The memory includes a memory array, a row decoder, a CMUX circuit and a current comparison readout circuit. In the memory array, the intersection of each row of word line WL / WLS and each column of bit line corresponds to a memory cell bitcell; in the memory array, the intersection of each row of word line WL / WLS and each column of bit line corresponds to a complementary memory cell bitcell_b; in the memory array, each column of bit line and a complementary bit line are connected to the input of the CMUX circuit, and the CMUX circuit outputs CL to and a complementary column decodes and outputs CLref to the current comparison readout circuit; by adoption of the embedded non-volatile memory and the current comparison readout circuit thereof, disclosed by the invention, the reliability of the flash memory readout circuit can be improved.

Description

technical field [0001] The invention relates to the technical field of embedded nonvolatile memory, in particular to an embedded nonvolatile memory and a current comparison readout circuit thereof. Background technique [0002] With the continuous improvement of semiconductor manufacturing technology and integrated circuit design capabilities, embedded non-volatile memory (EFLASH MEMORY) has become an indispensable part of embedded memory due to its ability to save data when power is off by storing program codes and user data. important parts of. It has played a positive role in improving system performance, improving chip reliability, reducing cost and power consumption, and so on. [0003] With the improvement of consumption level, customers' chip technology level has also been continuously improved. The performance of eflash memory has increasingly become the key indicator of system-level chips. The data reading speed is constantly increasing, and higher and higher requi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/08
CPCG11C16/08G11C16/26
Inventor 詹泽红顾明金建明
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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