A method for characterization of wafer twist
A distortion and characterization technology, applied in the field of wafer distortion characterization, can solve the problems of increasing labor cost, inability to bond wafer distortion measurement, affecting wafer production efficiency, etc., achieving low labor cost and high production efficiency. Effect
Active Publication Date: 2019-11-29
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
[0003] The existing wafer machine production cannot measure the distortion of bonded wafers, or after the wafer machine is shut down, independent inspection equipment is used to manually detect the wafer, but shutting down the wafer machine will Affect wafer production efficiency and increase labor costs
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[0031] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0032] In a preferred embodiment, as Figure 1~4 As shown, a characterization method for wafer twist is proposed, which can be applied to a bonded wafer on a wafer machine. Marks distributed in an array are arranged on the bonded wafer. The characterization method may include:
[0033] Step S1, measuring the position of each marker to obtain the actual coordinates of each marker;
[0034] Step S2, performing linear compensation according to the actual coordinates of the mark to form a compensation line a extending in the first direction and the second direction;
[0035] Step S3, performing a linear simulation according to the actual coordinates of the mark to form a simulation line b extending in the first direction and the second direction;
[0036] Step S4, comparing and counting the difference between the compensation line a extending in the first...
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The present invention relates to the field of semiconductor technology, in particular to a method for characterizing wafer twist, which is applied to a one-bond wafer on a wafer machine, including: step S1, obtaining the actual coordinates of each mark; step S2, according to the mark The actual coordinates of the mark are linearly compensated to form a compensation line extending in the first direction and the second direction; step S3, performing a linear simulation according to the actual coordinates of the mark to form a simulation line extending in the first direction and the second direction; step S4, comparing and counting the difference between the compensation line extending in the first direction and the simulation line to form the first parameter characterizing the twist of the bonded wafer in the first direction, and the difference in the second direction The difference between the extended compensation line and the simulation line is compared and counted to form a second parameter characterizing the twist of the bonded wafer in the second direction; To characterize the twist of the wafer, the production efficiency is high, and the labor cost is low.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for characterizing wafer distortion. Background technique [0002] In the semiconductor production process, for backlighting products, it involves the combination of logic wafers and pixel wafers, and distortion and deformation are likely to occur between the wafers during the combination process. [0003] The existing wafer machine production cannot measure the distortion of bonded wafers, or after the wafer machine is shut down, independent inspection equipment is used to manually detect the wafer, but shutting down the wafer machine will It affects the production efficiency of the wafer and increases the labor cost. Contents of the invention [0004] In view of the above problems, the present invention proposes a characterization method of wafer twist, which is applied to a bonded wafer on a wafer machine, and marks distributed in an array are arranged on th...
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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 李兵
Owner WUHAN XINXIN SEMICON MFG CO LTD