Substrate support unit, substrate treating apparatus including same, and method for controlling same
A technology for a substrate processing device and a support unit, which is applied in the application of electrostatic attraction to holding devices, electrical components, semiconductor/solid-state device manufacturing, etc., and can solve the problems of increased operating time, wear, and accelerated ions of etching equipment.
Active Publication Date: 2018-04-17
SEMES CO LTD
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[0004] However, as the operating time of the etching apparatus increases, the upper surface of the above-mentioned annular member is exposed to the plasma, and the ion abrasion accelerated by the plasma sheath
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[0042] The above and other aspects, features and advantages of the present invention will become apparent from the following description of the embodiments given in conjunction with the accompanying drawings. However, the scope of the inventive concept is not limited to the embodiments disclosed below, but may be implemented in various forms. The embodiments of the present inventive concept are provided so that the disclosure of the present inventive concept is complete and fully informs those skilled in the art to which the present inventive concept belongs the scope of the present inventive concept.
[0043] Although not defined, the meanings of all terms (including technical or scientific terms) used herein may be the same as commonly recognized meanings in the field to which the present inventive concept belongs. Terms defined by general dictionaries can be construed to have the same meanings as those in the related art and / or the disclosure of the present application, and...
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An objective of the inventive concept is to extend an exchange cycle by reducing a degree by which a ring member provided at a circumference of a substrate support is worn. A substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit that supports a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma source configured to generate plasma from the treatment gas. The support unit includes an electrostatic chuck, on which the substrate is positioned, a first ring surrounding a circumference of the substrate positioned on the electrostatic chuck, a second ring surrounding a circumference of the electrostatic chuck and formed of an insulation material, an insertion body disposed in the second ring and formed of a conductive material, and an impedance control unit configured to adjust an impedance of the insertion body.
Description
technical field [0001] Embodiments of the inventive concept described herein relate to a substrate supporting unit, a substrate processing apparatus including the substrate supporting unit, and a method of controlling the substrate processing apparatus. Background technique [0002] A semiconductor manufacturing process may include a process of treating a substrate using plasma. For example, in an etching process of a semiconductor process, plasma may be used to remove a thin film on a substrate. [0003] In a substrate processing process, such as an etching process using plasma, the plasma region needs to expand to the peripheral region of the substrate, so as to increase the process uniformity around the substrate. To achieve this, a ring member surrounding the substrate support member may be provided, which ring member may exhibit electric field coupling, eg a ring insulator is used as the ring member to electrically isolate the lower module of the etching apparatus. ...
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IPC IPC(8): H01J37/32
CPCH01J37/32183H01J37/32715H01L21/67103H01L21/67109H01J37/32174H01J37/32449H01J37/32642H01J2237/334H01L21/6831H01L21/02315H01L21/3065H01L21/6835H01L21/68721H01L28/10H01L28/40H05H1/46H01J37/32477H01J37/32522H01J2237/0203H01L21/67069H02N13/00H03H7/38
Inventor 具滋明安宗焕南信祐卢收练
Owner SEMES CO LTD