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Semiconductor thin film and thin film transistor, manufacture method thereof, and related device

A thin-film transistor and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of poor mobility and stability of bipolar thin film transistors, poor performance of bipolar thin film transistors, etc. The effect of good semiconductor performance, improved performance and simple process

Active Publication Date: 2018-05-08
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After the preparation, the performance of the bipolar thin film transistor was tested. From the test results, it can be seen that the performance of the bipolar thin film transistor prepared by the first method is relatively poor, and the performance of the bipolar thin film transistor prepared by the second method is relatively poor. Poor mobility and stability

Method used

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  • Semiconductor thin film and thin film transistor, manufacture method thereof, and related device
  • Semiconductor thin film and thin film transistor, manufacture method thereof, and related device
  • Semiconductor thin film and thin film transistor, manufacture method thereof, and related device

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Embodiment Construction

[0057] Embodiments of the present invention provide a semiconductor thin film and a manufacturing method thereof, a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, so as to improve the stability of the thin film transistor and improve the performance of the thin film transistor.

[0058] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0059] A specific embodiment of the present invention provides a semiconductor thin film, including an n-typ...

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Abstract

The invention discloses a semiconductor thin film and a manufacture method thereof, a thin film transistor and a manufacture method thereof, an array substrate and a display device and is used for improving the stability of the thin film transistor and improving the performance of the thin film transistor. The semiconductor thin film includes an n-type semiconductor layer and a p-type semiconductor layer arranged in a stacking manner, and a self-assembly layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and in contact with the n-type semiconductor layer and the p-type semiconductor layer. The self-assembly layer is made of phosphate self-assembly material.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a semiconductor thin film and a manufacturing method thereof, a thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] Thin Film Transistor (TFT) is mainly used to control and drive sub-pixels of Liquid Crystal Display (LCD) and Organic Light-Emitting Diode (OLED) displays, and is the most important in the field of flat panel display. One of the electronic devices. [0003] At present, most TFTs are unipolar, that is, they can only be driven by n-type or p-type. High-performance n-type semiconductor materials mainly include amorphous silicon and oxides. Among them, oxide semiconductors have the advantages of high carrier mobility, transparency to visible light, and solution processing. In the field of TFT substrates for flat panel displays, they tend to replace thin-film transistors prepared by tradition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40H10K99/00
CPCH10K71/12H10K10/488H10K10/484H10K10/466H10K10/486
Inventor 闫梁臣徐晓光王磊彭俊彪兰林锋
Owner BOE TECH GRP CO LTD