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Semiconductor device

A semiconductor and conductive technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced reliability and damage, and achieve the effect of high reliability

Active Publication Date: 2021-01-05
SANKEN ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, when the withstand voltage of the peripheral region is low, damage is caused when the increase in avalanche current and voltage after generation of avalanche breakdown is small, and reliability is lowered

Method used

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  • Semiconductor device
  • Semiconductor device
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no. 1 Embodiment approach

[0047] like figure 1 As shown, the semiconductor device 1 according to the first embodiment of the present invention has an element region 101 in which a semiconductor element is formed, and an outer peripheral region 102 arranged around the element region 101 . The semiconductor device 1 has: a first semiconductor region (drift region 10) of the first conductivity type extending over the element region 101 and the peripheral region 102; and a plurality of second semiconductor regions (p-type columnar regions 20) of the second conductivity type. ), which are arranged separately from each other inside the first semiconductor region.

[0048] In addition, the first conductivity type and the second conductivity type are opposite to each other. That is, if the first conductivity type is n-type, the second conductivity type is p-type, and if the first conductivity type is p-type, the second conductivity type is n-type. Here, the first conductivity type is n-type, and the second c...

no. 2 Embodiment approach

[0089] like Figure 25 As shown, the p-type columnar regions 20 of the semiconductor device 1 according to the second embodiment of the present invention are arranged in dots at a constant interval L between centers in a plan view. other structures with figure 1 The first embodiment shown is the same.

[0090] That is, if Figure 25 As shown, in the p-type columnar region 20 having a rectangular cross section perpendicular to the depth direction, the impurity amount distribution in the depth direction of the p-type columnar region 20 is adjusted similarly to the case where the p-type columnar region 20 is stripe-shaped. For example, the impurity amount distribution in the depth direction of the p-type columnar region 20 is made constant in either the element region 101 or the outer peripheral region 102 . And, in the other aspect, the impurity amount distribution in the depth direction is changed. As a result, the withstand voltage of the outer peripheral region 102 can be...

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Abstract

A semiconductor device of the present invention has an element region, in which a semiconductor element is formed, and an outer peripheral region disposed around the element region. The semiconductor device is provided with: first conductivity-type first semiconductor regions extending across the element region and the outer peripheral region; and second conductivity-type second semiconductor regions, each of which constitutes a super-junction structure wherein a pn junction is disposed between each of the first semiconductor regions and each of the second conductivity-type semiconductor regions. In the outer peripheral region, the total impurity quantity ratio of the total impurity quantity of the second conductivity-type second semiconductor regions with respect to the total impurity quantity of the first conductivity-type first semiconductor regions is closer to 1 than the total impurity quantity ratio in the element region.

Description

technical field [0001] The present invention relates to a semiconductor device with a super junction (Super Junction) structure. Background technique [0002] A MOS transistor with a superjunction (SJ) structure (hereinafter referred to as "SJMOS") has the characteristics of high withstand voltage and low on-resistance, and a drift region and a p-type columnar region are periodically formed in this MOS transistor. pn junction. In SJMOS, a current can flow through a drift region where the impurity concentration is high, and the on-resistance can be reduced. On the other hand, at the time of reverse bias, the drift region is depleted by the depletion layer extending from the pn junction to ensure a high breakdown voltage. At this time, in order to completely deplete the drift region, the ratio of the total amount of p-type impurities to the total amount of n-type impurities is set close to 1. [0003] In the case of using SJMOS as a power semiconductor element, etc., in ord...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78
CPCH01L29/06H01L29/78H01L29/0634H01L29/0646
Inventor 大森宽将
Owner SANKEN ELECTRIC CO LTD