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Trench-type vertical double-diffused metal oxide transistor and manufacturing method thereof

A technology of oxide transistors and vertical double diffusion, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex process and high cost, and achieve the effects of simplified process flow, low cost and low operating efficiency

Active Publication Date: 2021-10-26
深圳市鑫飞宏电子有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, and it is necessary to improve

Method used

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  • Trench-type vertical double-diffused metal oxide transistor and manufacturing method thereof
  • Trench-type vertical double-diffused metal oxide transistor and manufacturing method thereof
  • Trench-type vertical double-diffused metal oxide transistor and manufacturing method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] see Figure 1-Figure 10 , figure 1 It is a flow chart of the fabrication method of the trench-type vertical double-diffused metal oxide transistor of the present invention, Figure 2-Figure 10 for figure 1 Schematic diagram of the structure of each step of the manufacturing method of the trench type vertical double-diffused metal oxide transistor shown. The manufacturing method of the trench-type vertical double-diffused metal oxide transistor includes the following steps.

[0031] Step S1, see figure 2 ...

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Abstract

A method for manufacturing a trench-type vertical double-diffused metal oxide transistor includes the following steps: providing an N-type substrate, and sequentially forming an N-type epitaxial layer, a P-type body region, and a first trench on the N-type substrate and the second trench; forming polysilicon on the gate oxide layer in the first and second trenches and on the P-type body region; performing heat treatment on the polysilicon so that the N-type impurities in the polysilicon enter The P-type body region is adjacent to the surface of the polysilicon, so that an N-type source region is formed on the surface of the P-type body region adjacent to the polysilicon, and the polysilicon outside the trench is oxidized to be located at the N-type source region. silicon dioxide on the region; form a contact hole that runs through the silicon dioxide and the N-type source region on both sides of the first and second trenches and extends to the P-type body region; forms a front metal layer and a back metal layer .

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a trench-type vertical double-diffused metal oxide transistor and a manufacturing method thereof. 【Background technique】 [0002] The trench type VDMOS (vertical double diffused metal oxide transistor) is widely used in the field of switching power supply. Trench-type vertical double-diffused metal-oxide-semiconductor transistors (referred to as: trench-type VDMOS) are channeled by forming a vertical diffusion distance difference after source ion and bulk ion implantation, and are widely used in the field of switching power supply and synchronous rectification. Compared with the planar VDMOS, the internal resistance of the trench VDMOS is very small because the JFET area is eliminated. [0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, which need to be improved. 【Content of invent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L29/49
CPCH01L29/4236H01L29/4916H01L29/66734H01L29/7802H01L29/7813
Inventor 不公告发明人
Owner 深圳市鑫飞宏电子有限公司
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