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Trench type vertical double-diffused metal oxide transistor and manufacturing method thereof

An oxide transistor, vertical double diffusion technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex process and high cost, and achieve the effect of simplifying the process flow, low cost and large output

Active Publication Date: 2021-02-26
自贡国晶科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, and it is necessary to improve

Method used

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  • Trench type vertical double-diffused metal oxide transistor and manufacturing method thereof
  • Trench type vertical double-diffused metal oxide transistor and manufacturing method thereof
  • Trench type vertical double-diffused metal oxide transistor and manufacturing method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] see Figure 1-Figure 10 , figure 1 It is a flow chart of the fabrication method of the trench-type vertical double-diffused metal oxide transistor of the present invention, Figure 2-Figure 10 for figure 1 Schematic diagram of the structure of each step of the manufacturing method of the trench type vertical double-diffused metal oxide transistor shown. The manufacturing method of the trench-type vertical double-diffused metal oxide transistor includes the following steps.

[0031] Step S1, see figure 2 ...

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Abstract

A method for manufacturing a trench-type vertical double-diffused metal oxide transistor includes the following steps: providing an N-type substrate, and sequentially forming an N-type epitaxial layer, a P-type body region, and a trench on the N-type substrate; A gate oxide layer and first polysilicon are sequentially formed on the inner wall of the trench; a second polysilicon is formed on the gate oxide layer in the trench, on the first polysilicon and on the P-type body region; performing heat treatment on the second polysilicon, so that the N-type impurities in the second polysilicon enter the surface of the P-type body region adjacent to the polysilicon, so that the P-type body region adjacent to the surface of the first polysilicon An N-type source region is formed on the surface of the second polysilicon, and the second polysilicon outside the trench is oxidized to silicon dioxide on the N-type source region; for the silicon dioxide, the N Type source region and the P-type body region are etched, thereby forming a contact hole that runs through the silicon dioxide and the N-type source region on both sides of the trench and extends to the P-type body region; forms a front metal layer With back metal.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a trench-type vertical double-diffused metal oxide transistor and a manufacturing method thereof. 【Background technique】 [0002] The trench type VDMOS (vertical double diffused metal oxide transistor) is widely used in the field of switching power supply. Trench-type vertical double-diffused metal-oxide-semiconductor transistors (referred to as: trench-type VDMOS) are channeled by forming a vertical diffusion distance difference after source ion and bulk ion implantation, and are widely used in the field of switching power supply and synchronous rectification. Compared with the planar VDMOS, the internal resistance of the trench VDMOS is very small because the JFET area is eliminated. [0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, which need to be improved. 【Content of invent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66734H01L29/7813
Inventor 不公告发明人
Owner 自贡国晶科技有限公司
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