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Trench type vertical double-diffusion metallic oxide transistor and manufacturing method thereof

An oxide transistor, vertical double diffusion technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex process and high cost, and achieve the effect of simplifying the process flow, low cost and large output

Active Publication Date: 2018-05-18
深圳市鑫飞宏电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, and it is necessary to improve

Method used

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  • Trench type vertical double-diffusion metallic oxide transistor and manufacturing method thereof
  • Trench type vertical double-diffusion metallic oxide transistor and manufacturing method thereof
  • Trench type vertical double-diffusion metallic oxide transistor and manufacturing method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] see Figure 1-Figure 10 , figure 1 It is a flow chart of the fabrication method of the trench-type vertical double-diffused metal oxide transistor of the present invention, Figure 2-Figure 10 for figure 1 Schematic diagram of the structure of each step of the manufacturing method of the trench type vertical double-diffused metal oxide transistor shown. The manufacturing method of the trench-type vertical double-diffused metal oxide transistor includes the following steps.

[0031] Step S1, see figure 2 ...

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Abstract

A manufacturing method of a trench type vertical double-diffusion metallic oxide transistor includes the steps of providing an N type substrate, and forming an N type epitaxial layer, a P type body region, a first trench and a second trench on the N type substrate in sequence; forming polycrystalline silicon on gate oxidation layers in the first and second trenches and the P type body regions; performing thermal treatment on the polycrystalline silicon, so that N type impurities in the polycrystalline silicon enter the surface of the P type body region close to the polycrystalline silicon, andforming an N type source region on the surface of the P type body region close to the polycrystalline silicon, the polycrystalline silicon on the outer sides of the trenches being oxidized into silicon dioxide located in the N type source region; forming silicon dioxide and N type source region that run through two sides of the first and second trenches and extending to contact holes in the P type body region; and forming a front side metal layer and reverse side metal.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a trench-type vertical double-diffused metal oxide transistor and a manufacturing method thereof. 【Background technique】 [0002] The trench type VDMOS (vertical double diffused metal oxide transistor) is widely used in the field of switching power supply. Trench-type vertical double-diffused metal-oxide-semiconductor transistors (referred to as: trench-type VDMOS) are channeled by forming a vertical diffusion distance difference after source ion and bulk ion implantation, and are widely used in the field of switching power supply and synchronous rectification. Compared with the planar VDMOS, the internal resistance of the trench VDMOS is very small because the JFET area is eliminated. [0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, which need to be improved. 【Content of invent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L29/49
CPCH01L29/4236H01L29/4916H01L29/66734H01L29/7802H01L29/7813
Inventor 不公告发明人
Owner 深圳市鑫飞宏电子有限公司
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