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Photoelectric conversion device and method for manufacturing same

A photoelectric conversion device and manufacturing method technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of semiconductor area and electrode area becoming smaller, conversion characteristics cannot be fully improved, etc., to achieve area expansion, Excellent extraction efficiency and the effect of suppressing leakage

Active Publication Date: 2018-06-08
KANEKA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the width of the separation groove is enlarged to reliably prevent leakage, the area of ​​the semiconductor region and the electrode that contribute to power generation becomes smaller, and the conversion characteristics cannot be sufficiently improved.

Method used

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  • Photoelectric conversion device and method for manufacturing same
  • Photoelectric conversion device and method for manufacturing same
  • Photoelectric conversion device and method for manufacturing same

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Embodiment Construction

[0037] figure 1 It is a plan view of the back-contact photoelectric conversion device 101 according to one embodiment of the present invention viewed from the back side (the side opposite to the light-receiving surface). figure 2 yes figure 1 A cross-sectional view of line A-A. Such as figure 1 As shown, the photoelectric conversion device 101 of the present invention has the first conductivity type region 1 and the second conductivity type region 2 on the back side of the semiconductor substrate 10 . The regions 1 of the first conductivity type and the regions 2 of the second conductivity type are formed in a comb shape or a strip shape interlocking with each other, and are preferably arranged alternately along the first direction (x direction).

[0038] The first conductivity type region and the second conductivity type region are preferably provided without gaps over the entire region of the conductivity type semiconductor substrate except the edge. A boundary region 9...

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Abstract

A photoelectric conversion device (101) has, on one main surface of a semiconductor substrate (10), a first conductivity-type region (1), a second conductivity-type region (2), and a boundary region (9), which is in contact with the first conductivity-type region and the second conductivity-type region, and separates the regions from each other. A first conductivity-type semiconductor layer (61) is provided over the boundary region and the whole surface of the first conductivity-type region (2), and a second conductivity-type semiconductor layer (31) is provided over the boundary region and the whole surface of the second conductivity-type region. An insulating layer (41) is provided on the whole surface of the boundary region. A first electrode (71) is provided over the boundary region and the whole surface of the first conductivity-type region, and a second electrode (72) is provided in the second conductivity-type region. The second electrode is not provided in the region where thefirst conductivity-type semiconductor layer is formed, and the second electrode is separated from the first electrode.

Description

technical field [0001] The present invention relates to a photoelectric conversion device and a manufacturing method thereof. Background technique [0002] In a typical solar cell, a pn junction is formed on the light-receiving surface side of a semiconductor substrate such as a crystalline silicon substrate, and a light-receiving surface-side electrode for recovering photocarriers is provided thereon. In order to improve the photocarrier recovery efficiency of the entire light-receiving surface while suppressing shadow loss, the light-receiving-side electrode of the solar cell is formed in a pattern. However, since there is a trade-off relationship between the reduction of shadow loss and the improvement of carrier recovery efficiency, there is always a limit to the improvement of conversion efficiency by adjusting the pattern shape of the electrode on the light-receiving side. [0003] In view of these, a back contact solar cell in which a p-type semiconductor region and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0747
CPCH01L31/022441H01L31/0747H01L31/1804Y02E10/547Y02P70/50H01L31/072H01L31/18Y02E10/50
Inventor 小西克典吉河训太河崎勇人中野邦裕
Owner KANEKA CORP
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