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High-voltage LED light source and manufacturing method thereof

An LED light source, high-voltage technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of current expansion current crowding, reduce device luminous efficiency, and current expansion affect performance, etc. Effect

Inactive Publication Date: 2018-07-27
AOYANG GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] High-power LEDs usually work at high currents, and the current expansion problem seriously affects their perform

Method used

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  • High-voltage LED light source and manufacturing method thereof

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Embodiment Construction

[0028] The technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] combine figure 1 As shown, a high-voltage LED light source provided by the embodiment of the present application includes a substrate 10 and a plurality of independent LED units 20 formed on the surface of the substrate 10, and each LED unit 20 respectively includes N-type GaN layer 21, quantum well layer 22, P-type GaN layer 23, ITO window layer 24, SiO 2 The passivation layer 25, and the P electrode 26 and the N electrode 27 electrically connected wit...

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Abstract

The invention discloses a high-voltage LED light source and a manufacturing method thereof. The high-voltage LED light source comprises a substrate, and a plurality of independent LED units formed onthe surface of the substrate; each LED unit comprises an N type GaN layer, a quantum well layer, a P type GaN layer, an ITO window layer and a SiO<2> passivation layer which are formed on the substrate in sequence, and a P electrode and an N electrode electrically connected with the ITO window layer and the N type GaN layer respectively; the P electrode of one LED unit and the N electrode of the adjacent LED unit are electrically connected in series through a metal layer; and the thickness of the ITO window layer is even number times of 57.5nm. By virtue of the high-voltage LED, influence to droop efficiency can be relieved, and the manufactured LED device has high light output efficiency.

Description

technical field [0001] The present application relates to the technical field of semiconductor light emitting, in particular to a high-voltage LED light source and a manufacturing method thereof. Background technique [0002] High-power LEDs usually work under high current, and the problem of current expansion seriously affects their performance. Uneven current expansion can easily lead to current crowding, which greatly reduces the luminous efficiency of the device. Contents of the invention [0003] The object of the present invention is to provide a high-voltage LED light source and its manufacturing method, so as to overcome the deficiencies in the prior art. [0004] To achieve the above object, the present invention provides the following technical solutions: [0005] The embodiment of the present application discloses a high-voltage LED light source, which includes a substrate and a plurality of independent LED units formed on the surface of the substrate, and eac...

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Application Information

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IPC IPC(8): H01L33/48H01L33/06H01L33/00
CPCH01L33/48H01L33/005H01L33/06
Inventor 沈学如
Owner AOYANG GRP CO LTD