A kind of miniature light-emitting element and its manufacturing method
A technology of light-emitting elements and manufacturing methods, which is applied to electrical elements, electric solid-state devices, semiconductor devices, etc., and can solve problems such as electrode removal and bridge breakage
Active Publication Date: 2020-03-20
HUBEI SANAN OPTOELECTRONICS CO LTD
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Problems solved by technology
In order to achieve mass transfer, the chip is made in the air, and the corresponding bridge test is required, but it is prone to problems such as broken bridges or peeling.
Method used
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[0053] image 3(a) is the pattern on the lower surface of the micro light emitting diode chip in the first preferred embodiment. The micro light emitting diode includes: an epitaxial stack layer, which sequentially includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. having opposite first and second surfaces; a first electrode formed on the second surface of the epitaxial stack and connected to the first type semiconductor layer; a second electrode formed on the epitaxial stack On the second surface of the second electrode, it is connected with the second type semiconductor layer; the first electrode is divided into a first region 121a, a second region 131a and a third region 141a from the inside to the outside at the center of the electrode, and the three Regions can be distinguished by surface topography or appearance color. The LED chip 110 is a thin-film microstructure, and its preferred size is within 100 μm×100 μm, such as 1...
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Abstract
The invention discloses a miniature light-emitting element and a manufacturing method thereof. A conductive substrate is used with insulation isolation to form support columns for pinhole electrodes, and a common electrode is connected in parallel. The modular metal sacrificial layer is used as the test electrode to realize the massive full test of the micro light-emitting elements. The micro light-emitting element includes: an epitaxial stack, which sequentially includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, which have opposite first and second surfaces; a first electrode is formed on the epitaxial stack On the second surface of the epitaxial stack, connected to the first type semiconductor layer; a second electrode, formed on the second surface of the epitaxial stack, connected to the second type semiconductor layer; the first electrode The first connection area is respectively arranged on the surface of the second electrode and the second electrode. The first connection region can be distinguished from other regions of the electrode in terms of surface morphology or appearance color.
Description
technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a micro light-emitting element and a manufacturing method thereof. Background technique [0002] Micro LED (Micro LED, also known as μ-LED), in addition to OLED self-illumination, thin thickness, light weight, large viewing angle, short response time, high luminous efficiency, etc., it is easier to achieve high PPI (pixel density) and small size , easy to carry, low power consumption and other excellent characteristics, many units in the LED industry have devoted themselves to the development and application of components. Since the LED chip is very small and the electrode is smaller than the probe, how to realize the full test has become a very important difficulty. At present, it is mainly to sacrifice part of the chip to realize sampling test. In order to achieve mass transfer, the chip is manufactured in a floating type, and correspondingly, a floating...
Claims
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IPC IPC(8): H01L33/36H01L33/00
CPCH01L33/005H01L33/36G01R31/2635H01L2933/0033H01L33/62H01L2933/0066H01L33/44H01L2933/0025H01L25/0753G01R31/2884H01L2224/95136H01L24/95H01L33/0093H01L2933/0016
Inventor 钟志白李佳恩郑锦坚吴政徐宸科康俊勇
Owner HUBEI SANAN OPTOELECTRONICS CO LTD