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Monolithic integrated structure of bulk acoustic wave resonator and capacitor, manufacturing method thereof, filter, duplexer and radio frequency communication module

A bulk acoustic wave resonator, monolithic integration technology, applied in electrical components, impedance networks, etc., can solve the problems of bare chip and capacitor connection loss, reduced reliability of bulk acoustic wave filters, and large volume of bulk acoustic wave filters. Enhanced roll-off characteristics, avoid parasitic coupling effects, good roll-off characteristics

Active Publication Date: 2022-04-29
SUZHOU HUNTERSUN ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can enhance the roll-off characteristics of the bulk acoustic wave filter without deteriorating the passband performance of the bulk acoustic wave filter, since the capacitor is arranged outside the bare chip, it is necessary to provide additional support for the bulk acoustic wave resonator unit and the substrate of the capacitor. In this way, not only will the volume of the entire bulk acoustic wave filter be too large, but also the connection loss between the bare chip and the capacitor will be caused. In addition, the bonding wire and PCB wiring will bring additional parasitic coupling effect
In addition, manufacturing processes such as welding and assembly of capacitors will also lead to a decrease in the reliability of bulk acoustic wave filters

Method used

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  • Monolithic integrated structure of bulk acoustic wave resonator and capacitor, manufacturing method thereof, filter, duplexer and radio frequency communication module
  • Monolithic integrated structure of bulk acoustic wave resonator and capacitor, manufacturing method thereof, filter, duplexer and radio frequency communication module
  • Monolithic integrated structure of bulk acoustic wave resonator and capacitor, manufacturing method thereof, filter, duplexer and radio frequency communication module

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no. 1 example

[0075] This embodiment provides a monolithic integrated structure of a bulk acoustic wave resonator and a capacitor, and the monolithic integrated structure of a bulk acoustic wave resonator and a capacitor includes:

[0076] Substrate;

[0077] a lower electrode, the lower electrode is disposed on the substrate and forms a cavity with the substrate;

[0078] a piezoelectric layer disposed on the lower electrode;

[0079] an upper electrode, the upper electrode is disposed on the piezoelectric layer;

[0080] A first electrode, the first electrode is disposed in the substrate below the cavity and has a first overlapping area with the lower electrode.

[0081] Next, various parts of the monolithic integrated structure of the bulk acoustic wave resonator and capacitor provided by this embodiment will be described in detail with reference to FIG. 1( a ).

[0082] Specifically, as shown in FIG. 1( a ), the monolithic integrated structure of a bulk acoustic wave resonator and a ...

no. 2 example

[0087] This embodiment provides a monolithic integrated structure of a bulk acoustic wave resonator and a capacitor. This embodiment is basically the same as the first embodiment, the difference between the two mainly lies in that the monolithic integrated structure of the bulk acoustic wave resonator and the capacitor in this embodiment also includes a second electrode arranged on the upper surface of the substrate, Wherein, in addition to forming an overlapping area with the lower electrode, the first electrode also forms an overlapping area with the second electrode.

[0088] Next, the monolithic integrated structure of the bulk acoustic wave resonator and capacitor provided by this embodiment will be described with reference to FIG. 2( a ). For the sake of brevity, only the difference between this embodiment and the first embodiment will be described in detail below, and for the same parts between this embodiment and the first embodiment, please refer to the content descri...

no. 3 example

[0093] This embodiment provides a monolithic integrated structure of a bulk acoustic wave resonator and a capacitor. This embodiment is basically the same as the first embodiment, except that the first electrode not only forms an overlapping area with the lower electrode, but also forms a gap between the upper electrode and the part extending to the upper surface of the substrate. form overlapping regions.

[0094] Next, the monolithic integrated structure of the bulk acoustic wave resonator and capacitor provided by this embodiment will be described with reference to FIG. 3( a ). For the sake of brevity, only the difference between this embodiment and the first embodiment will be described in detail below, and for the same parts between this embodiment and the first embodiment, please refer to the content description of the corresponding part in the first embodiment.

[0095] Referring to FIG. 3( a ), the upper electrode 106 extends from the piezoelectric layer 105 to the up...

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Abstract

The invention provides a monolithic integrated structure of a bulk acoustic wave resonator and a capacitor, comprising: a substrate; a lower electrode, which is arranged on the substrate and forms a cavity with the substrate; a piezoelectric layer, the piezoelectric layer is disposed on the lower electrode; an upper electrode, the upper electrode is disposed on the piezoelectric layer; a first electrode, the first electrode is disposed in the substrate and located in the cavity There is a first overlapping region below and between the lower electrode. Correspondingly, the present invention also provides a method for manufacturing a monolithic integrated structure of a bulk acoustic wave resonator and a capacitor, a bulk acoustic wave filter, a duplexer, and a radio frequency communication module. The implementation of the present invention can realize the monolithic integration of bulk acoustic wave resonators and capacitors, and using the monolithic integrated structure to form a bulk acoustic wave filter can not only effectively ensure the roll-off characteristics of the bulk acoustic wave filter but also effectively reduce the volume of the bulk acoustic wave filter. The volume, thereby effectively reducing the volume of the duplexer and the radio frequency communication module.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a monolithic integrated structure of a bulk acoustic wave resonator and a capacitor and a manufacturing method thereof, a bulk acoustic wave filter, a duplexer and a radio frequency communication module. Background technique [0002] With the advent of the 4G / LTE era, mobile phones need to work in more frequency bands and higher frequencies, which makes the RF front-end modules in mobile phones need to embed more filters and duplexers. At the same time, people have also put forward higher requirements for the portability and low power consumption of mobile phones. The bulk acoustic wave filter and duplexer composed of bulk acoustic wave (BAW, Bulk Acoustic Wave) resonators can well meet the needs of 4G / LTE mobile phones with small volume, low insertion loss and excellent roll-off characteristics. RF front-end filtering needs. [0003] For applications in specific ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H9/54H03H9/70
CPCH03H9/02015H03H9/02047H03H9/02125H03H9/54H03H9/706
Inventor 蔡洵赖志国谢恒田晓洁赖亚明杨清华
Owner SUZHOU HUNTERSUN ELECTRONICS CO LTD
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