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Wafer cleaning device and wafer cleaning method

A technology for cleaning devices and wafers, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as wafer defects, and achieve the effect of shortening the cycle, not easy to form, and reducing pressure

Active Publication Date: 2018-10-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The main purpose of the present invention is to provide a wafer cleaning device and a wafer cleaning method to solve the problem that the deionized water nozzle in the prior art is easy to cause defects on the wafer

Method used

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  • Wafer cleaning device and wafer cleaning method
  • Wafer cleaning device and wafer cleaning method
  • Wafer cleaning device and wafer cleaning method

Examples

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Embodiment 1

[0054] The wafer cleaning device provided in this embodiment is as Figure 5 As shown, base 10 has a first surface for carrying wafer 20, and the wafer cleaning device includes two deionized water nozzles 30, each deionized water nozzle 30 is arranged above the first surface of base 10, each deionized The angle between the spraying direction of the water nozzle 30 and the first surface is 0°<θ<90°, one deionized water nozzle 30 has a first water outlet, the other deionized water nozzle 30 has a second water outlet, and the second deionized water nozzle 30 has a second water outlet. The outer side of the first water outlet and the second water outlet are in contact with each other, the radial sections of the first water outlet and the second water outlet are rectangular with the same shape and area, and at least one of the first water outlet The side and at least one side of the second water outlet are parallel to each other.

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Abstract

The invention provides a wafer cleaning device and a wafer cleaning method. The device is used for cleaning a wafer adsorbed by a substrate, wherein the substrate is provided with a first surface carrying the wafer. The wafer cleaning device comprises multiple deionized water nozzles, wherein the deionized water nozzles are arranged on the first surface of the substrate, the spraying directions ofthe deionized water nozzles are different, an included angle theta is formed between the spraying direction of each deionized water nozzle and the first surface, and theta is more than 0 degree and less than 90 degrees. According to the device and method provided by the invention, the spraying directions of the deionized water nozzles are titled to the wafer surface, the pressure of deionized water on residue defects on the wafer can also be relieved, the middle defects are not easy to form, the horizontal thrust to the defects can also be increased, the existing middle defects are reduced, and thus the technological yield is greatly enhanced; and on the other hand, compared with the prior art in which the nozzles are perpendicular to the wafer, the abovementioned wafer cleaning device does not need relatively long cleaning time, and thus the period of the development technology is shortened.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a wafer cleaning device and a wafer cleaning method. Background technique [0002] Traditional wafer cleaning devices such as figure 1 As shown, the base 10' adsorbs the wafer 20' on the surface, and the deionized water is vertically sprayed on the wafer surface through the deionized water nozzle 30'. When the deionized water is vertically sprayed in the middle of the wafer, the middle of the wafer is deionized The pressure F of the ionized water is easy to form defects in the middle of the wafer, and the number of defects in the middle increases with the increase of the spray speed. [0003] From the nozzle to the wafer surface, the gravitational potential energy (E p = mgh) into kinetic energy [0004] thus deduce Assume that the initial velocity of deionized water at the nozzle is v 0 , the total velocity of deionized water reaching the wafer surface...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67051
Inventor 马玲韦亚一徐步青董立松
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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