Negative voltage tolerant io circuitry for io pads
A negative voltage and circuit technology, applied in the direction of logic circuit coupling/interface, circuit, logic circuit, etc. using field effect transistors, can solve the problems of inoperable electronic device functions, gate oxide damage, and affecting the normal operation of transistors, etc.
Active Publication Date: 2022-06-24
STMICROELECTRONICS SRL
View PDF14 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] However, power factor correction circuitry may cause negative voltages to be applied externally to the IO pads
This can cause damage to these transistors in the receiver and transmitter circuits associated with the IO pads
Specifically, the gate oxides of these transistors may be damaged, affecting the normal operation of the transistors and ultimately rendering the IO pads inoperable
This in turn can render certain functions of the electronics of the integrated circuit inoperable
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] One or more embodiments of the present disclosure will be described below. These described embodiments are merely examples of the presently disclosed technology. Furthermore, in order to provide a concise description, some features of an actual implementation may not be described in this specification. When introducing elements of various embodiments of the present disclosure, the articles "a," "an," and "the" are intended to mean that there are one or more of the elements. The terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements other than the listed elements.
[0027] First refer to figure 1 , the IO circuitry 10 of the IO pads 99 is now described. The IO circuitry includes transmitter circuitry 50 and receiver circuitry 60 .
[0028] Transmitter circuitry 50 includes multiplexer 52 configured to selectively pass data signals to pre-driver 54, which in turn generates p-channel control signals PD ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present disclosure relates to negative voltage tolerant IO circuitry for IO pads. An electronic device is disclosed herein that includes an IO node having a receiver coupled to receive input from the IO node. The transmitter driver has a first n-channel DMOS with a source coupled to the IO node. A pass gate decouples the IO node from the receiver based on the presence of a negative voltage at the IO node and couples the IO node to the receiver based on the absence of the negative voltage at the IO node. An emitter protection circuit applies the negative voltage from the IO node to the gate and body of the first n-channel DMOS based on the presence of the negative voltage at the IO node.
Description
technical field [0001] The present disclosure relates to negative voltage tolerant IO circuitry for IO pads of integrated circuits, and in particular to an IO pad having a negative voltage externally applied thereto during normal operation, such as at Configuration using power factor correction. Background technique [0002] An input output (IO) pad of an integrated circuit for serial communication has both a receiver circuit and a transmitter circuit associated therewith. To help control power dissipation in such circuits, it is desirable to use power factor correction circuitry to help boost power factor as close to ideal as possible. [0003] However, power factor correction circuitry can cause negative voltages to be applied externally to the IO pads. This can lead to damage to these transistors in the receiver and transmitter circuits associated with the IO pads. Specifically, the gate oxides of these transistors can be damaged, thereby affecting the normal operation...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0185
CPCH03K19/018507H03K19/017509H01L27/0266H01L29/7802H01L29/7801
Inventor R·库马尔
Owner STMICROELECTRONICS SRL