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NAND reference voltage measuring method, system and device, and storage medium

A technology of reference voltage and measurement method, which is applied in the field of NAND voltage, can solve the problems of NAND reference voltage influence and achieve the effect of accurate measurement

Active Publication Date: 2018-11-06
GUANGDONG UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of NAND reference voltage measuring method, it can solve the technical problem how to solve the influence of persistent noise interference on NAND reference voltage to a certain extent

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  • NAND reference voltage measuring method, system and device, and storage medium
  • NAND reference voltage measuring method, system and device, and storage medium

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Embodiment Construction

[0051] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0052]The action execution subject of each step in a NAND reference voltage measurement method provided by the embodiment of the present invention can be a NAND reference voltage measurement system provided by the embodiment of the present invention, and the system can be built in a computer, server, etc., so this The action execution subject of each step in the method for measuring a NAND reference voltage provided by the embodiment of the invention may be a c...

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Abstract

The invention discloses an NAND reference voltage measuring method, system and device, and a storage medium. The NAND reference voltage measuring method includes the steps: acquiring a voltage excursion interval of each overlap area of NAND and the initial reference voltage corresponding to each voltage excursion interval; for each overlap area, acquiring the number of the units in each voltage section in the overlap area, wherein the width of the voltage section is the width of the preset number of voltage excursion intervals; according to the number of the units and the initial reference voltage, determining the target reference voltage of the overlap area; and realizing accurate measurement of the voltage of the overlap area under the influence of the continuous noise of the NAND. Compared with the prior art, the NAND reference voltage measuring method solves the technical problem about how to solve the influence of the continuous noise on the NAND reference voltage to some extent.The disclosed NAND reference voltage measuring system and device and the computer readable storage medium can also solve the corresponding technical problem.

Description

technical field [0001] The present invention relates to the technical field of NAND voltage, and more specifically, relates to a method, system, device and storage medium for measuring a NAND reference voltage. Background technique [0002] In NAND (computer flash memory device), due to the interference of persistent noise, the threshold voltage of the overlapping area of ​​NAND will shift to the left, that is, the interference of persistent noise will make the actual reference voltage deviate from the theoretical reference voltage value. is small, which makes the accuracy of NAND performance analysis based on the reference voltage low. However, the prior art does not provide a technical solution to solve the impact of persistent noise interference on the NAND reference voltage. see figure 1 , figure 1 It is a schematic diagram showing that the overlapping area is not affected by persistent noise and is not affected by persistent noise, where r1, r2, r3 represent three ref...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00G11C11/413
CPCG01R19/0069G11C11/413
Inventor 韩国军范正勤刘文杰方毅蔡国发
Owner GUANGDONG UNIV OF TECH
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