Wide-Bandgap Semiconductor Device Including Gate Fingers Between Bond Pads

Abstract

A semiconductor device includes a semiconductor body of a wide-bandgap semiconductor material. A plurality of first bond areas is connected to a first load terminal of the semiconductor device. Firstgate fingers are arranged between the first bond areas. The first gate fingers extend in a first lateral direction and branch off from at least one of a first gate line portion and a second gate lineportion. Second gate fingers extend in the first lateral direction. A first length of any of the first gate fingers along the first lateral direction is greater than a second length of any of the second gate fingers along the first lateral direction. A sum of the first length and the second length is equal to or greater than a lateral distance between the first gate line portion and the second gate line portion along the first lateral direction.

Description

technical field [0001] The present invention relates to wide bandgap semiconductor devices comprising gate fingers between bond pads. Background technique [0002] Wide bandgap semiconductor devices are based on semiconductor materials with a bandgap of at least 2 eV or at least 3 eV, and allow for lower on-state resistance and higher current densities than conventional silicon-based semiconductor devices. When switching high current densities at high frequencies in wide bandgap semiconductor devices such as, for example, field effect transistors (FETs) or insulated gate bipolar transistors (IGBTs), uniform current distribution across the active area of ​​the transistor cell array is desired to This serves to avoid excessive stress, which may be caused by non-uniform current distribution and which may degrade the reliability of the semiconductor device. [0003] It is desirable to improve the uniformity of load current distribution across the active region of a wide bandgap...

AI Technical Summary

Problems solved by technology

When switching high current densities at high frequencies in wide bandgap semiconductor devices such as, for example, field effect transistors (FETs) or insulated gate bipolar transistors (IGBTs), uniform current distribution across the active area of ​​the transistor cell array is desired to For avoiding excessive stress, which may be caused by non-uniform current distribution and which may degrade the reliability of semiconductor devices

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