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A pixel structure of a high dynamic range image sensor

An image sensor, high dynamic range technology, applied in the field of image sensors, can solve problems such as resolution reduction, sacrificing resolution or frame rate, and non-monotonous sensitivity curve to achieve the effect of improving dynamic range

Active Publication Date: 2018-12-14
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, pixel merging will reduce the resolution, multi-frame exposure will sacrifice resolution or frame rate, and segmented exposure will introduce inflection points so that the sensitivity curve of segmented exposure is not monotonous
Moreover, the dynamic range of the existing high dynamic range exposure method will be limited by the working threshold of the pixel readout circuit

Method used

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  • A pixel structure of a high dynamic range image sensor
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  • A pixel structure of a high dynamic range image sensor

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Experimental program
Comparison scheme
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Embodiment 1

[0036] as attached image 3 As shown, the signal conversion module includes a photodiode PD, a transmission MOS transistor M0, and a reset MOS transistor M1. One end of the photodiode PD is grounded, the other end is connected to the source of the transmission MOS transistor M0, and the gate of the transmission MOS transistor M0 is connected to the transmission signal TX. , the drain of the transmission MOS transistor is connected to the source of the reset MOS transistor M1; the drain of the reset MOS transistor is connected to the power supply, and the gate of the reset MOS transistor is connected to the reset signal RX. When the TX signal is turned on and the RX signal is turned on, the photodiode PD is in the reset state, the charge converted from the photons received by the photodiode will be absorbed into the power supply, and the photodiode does not generate effective charges. At this time, the output voltage of the signal conversion module magnitude is the reset voltag...

Embodiment 2

[0040] as attached Figure 4 As shown, the signal conversion module includes an RPD transistor M3, a photodiode PD, a transmission MOS transistor M0, a reset MOS transistor M1, a capacitor CAP and an RC transistor M4. When the RX signal, TX signal and RPD signal are turned on, the PC signal is turned off. At this time, the photodiode and the capacitor are reset, that is, the voltages of points B, C and D are equal, and V D =V B =V C =VDD,

[0041] Subsequently, the TX signal and the RPD signal are turned off, and the PD is exposed to generate charges, so that the voltage at point D decreases.

[0042] The TX signal is turned on again, so that the charge generated by the PD reaches one end of the capacitor CAP, so that the voltage at point B decreases.

[0043] The TX signal is turned off again, and the voltage at point B is stable, and the stable voltage is V B =VDD-V pix , where V pix Charge generated for PD exposure.

[0044] The RX signal is turned off, and the voltag...

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Abstract

The invention discloses a pixel structure of a high dynamic range image sensor, comprising a signal conversion module, a signal determination module and a signal output module. The signal output module comprises a signal output path I and a signal output path II. The signal output path I and the signal output path II comprise two input ports and one output port. The output port of the signal conversion module is simultaneously connected with the input port of the signal determination module. The input port of the signal output path I and the input port of the signal output path II are respectively connected with the input port of the signal output path I and the input port of the signal output path II. The invention provides a pixel structure of a high dynamic range image sensor, comprising two signal output paths, and the corresponding signal output paths can be automatically selected for large signals and small signals outputted from a signal conversion module, thereby improving thedynamic range of pixel output signals.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a high dynamic range image sensor pixel structure. Background technique [0002] With the continuous development of image sensor technology, CMOS image sensors are more and more widely used in electronics, monitoring, navigation, transportation and other fields due to their advantages of high integration and low power consumption. However, with the continuous development of CMOS image sensor technology, the requirements for the performance of the CMOS image sensor are also getting higher and higher. [0003] The dynamic range of a pixel is an important index to measure the performance of an image sensor. The larger the dynamic range of the image sensor, the more detailed and realistic the shooting scene can be reflected, especially when shooting scenes with large differences between light and dark, if the dynamic range is small , then either the dark scene is completely black, or th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/355H04N5/374
CPCH04N25/57H04N25/76
Inventor 曾夕杨海玲张远严慧婕
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT