Unlock instant, AI-driven research and patent intelligence for your innovation.

A data storage method and a storage device

A storage device and data storage technology, applied in the direction of electrical digital data processing, input/output process of data processing, instruments, etc., can solve problems such as unstable data storage, and achieve the effect of avoiding poor storage stability

Inactive Publication Date: 2018-12-18
LANGCHAO ELECTRONIC INFORMATION IND CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When the flash memory is working, it is often written randomly. In the process of writing data to a block, there is often a case where the block is not fully written within the preset time, resulting in the data of the last page written on the block Unstable storage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A data storage method and a storage device
  • A data storage method and a storage device
  • A data storage method and a storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056]Flash memory (Flash memory) is a non-volatile (non-volatile) memory, generally referred to as "Flash", which can be divided into NOR type and NAND type flash memory. Among them, NOR flash memory technology was proposed by Intel in 1988. NOR flash memory is more suitable for frequent random read and write occasions. It is usually used to store program codes and run directly on flash memory cards. NAND flash memory technology was proposed by Toshiba in 1989. It is proposed that the current NAND flash memory is mainly used to store data. The storage unit of NAND flash memory adopts a serial structure, and the data operation of the storage unit is carried out in units of page (page) and block. A page contains several bytes, and several pages form a block. When reading and writing data, read and write in units of pages, and when erasing data, erase in units of blocks.

[0057] Flash memory can keep data for a long time without current supply, and its storage characteristics ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application discloses a data storage method for improving the stability of data storage. The method includes: a storage device writes valid data in a first target data block, wherein a logical address LBA and a physical address PBA of the valid data are valid addresses; In a preset time period, if the first target block is not full, the storage device writes the first padding data in the remaining storage space of the first target block divided by the valid data, and the LBA and PBA of the first padding data are invalid addresses.

Description

technical field [0001] The present application relates to the field of data storage, and in particular to a data storage method and a storage device. Background technique [0002] Flash memory (flash memory) is a long-life non-volatile memory, which is currently widely used in various portable digital devices and becomes the basis of storage media for various portable digital devices. Flash memory can be divided into NOR type flash memory and NAND type flash memory. NOR flash memory is more suitable for frequent random read and write occasions, usually used to store program code and run directly in flash memory, NAND flash memory is mainly used to store data. Wherein, the minimum unit of reading and writing of the flash memory is a page (page), and the minimum unit of erasing is a block (block), and each block contains multiple pages. [0003] Due to the electrical characteristics of NAND flash memory, once a block in NAND flash memory is opened (at least one page has been...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0614G06F3/064G06F3/0652G06F3/0679
Inventor 郑善龙
Owner LANGCHAO ELECTRONIC INFORMATION IND CO LTD