A method for improving the uniformity of threshold voltage of n-type sonos device
A threshold voltage and device technology, which is applied in the field of improving the threshold voltage uniformity of N-type SONOS devices, can solve problems such as poor threshold voltage uniformity, and achieve the effects of reducing doping fluctuation and improving threshold voltage uniformity.
Active Publication Date: 2021-10-19
SHANGHAI HUALI MICROELECTRONICS CORP
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[0014] The technical problem to be solved by the present invention is to provide a method for improving the uniformity of threshold voltage of N-type SONOS devices, which can solve the problem of poor uniformity of threshold voltage
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[0036] The implementation of the present invention will be described below through specific specific examples and in conjunction with the accompanying drawings. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or ratio changes can be made to the details in this specification based on different viewpoints and applications without departing from the principle of the present invention.
[0037] Based on the current experience of SONOS device development, in the existing process, RDF (Random dopantfluctuation) is the main source of the poor uniformity of the threshold voltage Vt of the SONOS device. Therefore, in order to improve the uniformity of the threshold voltage of the SONOS device, we must find a way RDF (Random dopant fluctuation).
[0038] Acco...
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Abstract
The invention discloses a method for improving the uniformity of the threshold voltage of an N-type SONOS device, in which the well implantation is divided into two steps, first performing ion implantation to form a deeper well implantation region, and then forming a sacrificial layer through a hydrogen-containing oxidation process Oxide layer, and finally use indium to perform anti-puncture implantation and threshold voltage adjustment implantation with shallow depth. In the present invention, a sacrificial oxide layer is formed using a hydrogen-containing oxidation process, thereby reducing the concentration of boron B on the silicon surface, and then performing a second ion implantation using the characteristics of indium In that is not easy to diffuse, reducing doping fluctuations caused by diffusion, and forming The doping distribution is closer to the abrupt type, thereby improving the uniformity of the threshold voltage of N-type SONOS devices.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the uniformity of the threshold voltage of an N-type SONOS device. Background technique [0002] With the popularity of portable electronic products, such as notebook computers, mobile phones, memory cards, etc., non-volatile memory (Non-Volatile Memory, referred to as NVM)) devices have improved in terms of manufacturing technology, structure, operation mechanism and reliability. rapid development. [0003] Non-volatile storage technologies mainly include floating gate (floating gate) technology, split gate (split gate) technology and SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, silicon-silicon dioxide-silicon nitride-silicon dioxide -Silicon) technology. At present, SONOS technology is widely used due to its advantages of simple process, low operating voltage, fast speed, large capacity, high data reliability, and easy integration into standard ...
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IPC IPC(8): H01L27/11517H01L27/11521H01L21/265
CPCH01L21/265H10B41/00H10B41/30
Inventor 戴树刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP