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A method for improving the threshold voltage uniformity of N-type SONOS devices

A threshold voltage and device technology, which is applied in the field of improving the uniformity of threshold voltage of N-type SONOS devices, can solve problems such as poor uniformity of threshold voltage, achieve the effect of reducing doping fluctuation and improving uniformity of threshold voltage

Active Publication Date: 2018-12-21
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] The technical problem to be solved by the present invention is to provide a method for improving the uniformity of threshold voltage of N-type SONOS devices, which can solve the problem of poor uniformity of threshold voltage

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  • A method for improving the threshold voltage uniformity of N-type SONOS devices
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  • A method for improving the threshold voltage uniformity of N-type SONOS devices

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Embodiment Construction

[0037] The implementation of the present invention will be described below through specific specific examples and in conjunction with the accompanying drawings. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or ratio changes can be made to the details in this specification based on different viewpoints and applications without departing from the principle of the present invention.

[0038] Based on the current experience of SONOS device development, in the existing process, RDF (Random dopantfluctuation) is the main source of the poor uniformity of the threshold voltage Vt of the SONOS device. Therefore, in order to improve the uniformity of the threshold voltage of the SONOS device, we must find a way RDF (Random dopant fluctuation).

[0039] Acco...

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Abstract

The invention discloses a method for improving threshold voltage uniformity of N-type SONOS device, The trap implantation is divided into two steps: ion implantation to form deep trap implantation region, then oxidation process with hydrogen to form sacrificial oxide layer, and finally shallow penetration prevention implantation and threshold voltage adjustment implantation with indium. The present invention utilizes a hydrogen-containing oxidation process to form a sacrificial layer oxide layer, so that the boron B concentration on the silicon surface is reduced, and then the second ion implantation is carried out according to the characteristic that indium in is not easy to diffuse, the doping fluctuation caused by diffusion is reduced, and a doping distribution closer to the abrupt typeis formed, so that the uniformity of the threshold voltage of the N-type SONOS device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the uniformity of the threshold voltage of an N-type SONOS device. Background technique [0002] With the popularity of portable electronic products, such as notebook computers, mobile phones, memory cards, etc., non-volatile memory (Non-Volatile Memory, referred to as NVM)) devices have improved in terms of manufacturing technology, structure, operation mechanism and reliability. rapid development. [0003] Non-volatile storage technologies mainly include floating gate (floating gate) technology, split gate (split gate) technology and SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, silicon-silicon dioxide-silicon nitride-silicon dioxide -Silicon) technology. At present, SONOS technology is widely used due to its advantages of simple process, low operating voltage, fast speed, large capacity, high data reliability, and easy integration into standard ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11517H01L27/11521H01L21/265H10B41/00H10B41/30
CPCH01L21/265H10B41/00H10B41/30
Inventor 戴树刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP