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Display substrate, manufacturing method thereof, and display device

A manufacturing method and a display substrate technology, which are applied in the manufacture of semiconductor devices, electric solid devices, semiconductor/solid devices, etc., can solve the problems of TFT threshold voltage differences, affecting display effects, etc., to reduce the difference and improve the uniformity of the threshold voltage performance, and the effect of improving display quality

Active Publication Date: 2018-11-23
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a display substrate, a manufacturing method thereof, and a display device, which are used to solve the problem that there is a difference in TFT threshold voltage between a non-display area and a pixel area, which affects the display effect

Method used

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  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device

Examples

Experimental program
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Effect test

Embodiment 1

[0022] combine Figure 2-Figure 4 As shown, the display substrate in this embodiment includes a display area and a non-display area (including the GOA area in the figure), and the display area includes a plurality of pixel areas. The display substrate includes a first thin film transistor 2 located in a non-display area and a second thin film transistor 1 located in a pixel area, and the width-to-length ratio of the channel of the first thin film transistor 2 is greater than that of the channel of the second thin film transistor 1 Compare.

[0023] In this embodiment, a method for manufacturing a display substrate is provided, including:

[0024] Forming the first active layer 21 of the first thin film transistor 2 and the second active layer 11 of the second thin film transistor 1 through a patterning process;

[0025] Perform the first plasma treatment on the first active layer 21 of the first thin film transistor 2 to increase the turn-on voltage of the first thin film tr...

Embodiment 2

[0059] Based on the same inventive concept, this embodiment provides a display substrate and a display device. The display substrate is manufactured by the manufacturing method in Embodiment 1, and the display device includes the above-mentioned display substrate. Since the threshold voltage difference between the thin film transistors in the display area and the non-display area is reduced by the plasma treatment, the uniformity of the thin film transistors is improved, and the display quality of the product is improved.

[0060] The display device may be a liquid crystal display panel, an OLED display panel, a liquid crystal display device, an OLED display device, and the like.

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Abstract

The invention relates to the technical field of display, and discloses a display substrate and a manufacturing method thereof, and a display device. According to the display substrate manufacturing method, through carrying out plasma processing on an active layer of a thin film transistor in a non-display area, the turn-on voltage is increased, a difference value with the turn-on voltage of a thin film transistor in a display area is thus reduced, threshold voltage uniformity of the thin film transistor is improved, and the display quality of the display device is enhanced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a display substrate, a manufacturing method thereof, and a display device. Background technique [0002] In the field of flat panel display technology, Thin Film Transistor Liquid Crystal Display (TFT-LCD) has the advantages of small size, low power consumption, and relatively low manufacturing cost, and gradually occupies a dominant position in today's flat panel display market. In order to reduce the cost, the GOA (Gate Driver on Array) technology has gradually matured. This technology integrates the gate electrode driver circuit on the array substrate, so that the Gate IC is not required, thereby achieving the purpose of reducing the cost. [0003] For array substrates using GOA technology, there is a certain difference in threshold voltage between large-size TFTs in the GOA region and small-size TFTs in the pixel region. Specifically: for large-sized TFTs in the GOA region,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1222H01L27/127H01L27/1296
Inventor 杨维宁策胡合合
Owner BOE TECH GRP CO LTD