Gallium nitride power field effect transistor

Abstract

The invention discloses a gallium nitride power field effect transistor which comprises a substrate, a buffering layer, a GaN channel layer arranged on the buffering layer in an epitaxial mode, an AlGaN layer extended on the GaN, a source electrode, a drain electrode, a grid electrode, a polycrystalline silicon layer and an insulating layer, wherein the polycrystalline silicon layer and the insulating layer are arranged between the grid electrode and the AlGaN. When the voltage of the grid electrode is negative, electrons of a grid electrode metal layer are tunneled to the polycrystalline silicon layer, the threshold voltage of the GaN field effect transistor is increased, therefore, the switching performance of the GaN field effect transistor is improved, and the power consumption of the transistor is reduced.

Description

technical field

[0001] The invention discloses a structure of a gallium nitride (GaN) power field effect transistor, which belongs to the field of power semiconductor devices. Background technique

[0002] After years of development of power semiconductor devices based on silicon materials, the performance of the devices has approached the theoretical limit of silicon materials. At present, power semiconductor devices are entering the era of third-generation wide bandgap semiconductors represented by gallium nitride. Compared with silicon-based power semiconductor devices, gallium nitride-based power semiconductor devices have great advantages in terms of reducing the power loss of the device itself, improving switching frequency and device heat resistance.

[0003] The typical structure of a GaN field effect transistor is as figure 1 As shown, a layer of two-dimensional electron gas is formed between aluminum gallium nitride (AlGaN) and gallium nitride (GaN) due to the pi...

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