PN step of LED (Light Emitting Diode) chip, LED chip and manufacturing method of PN step

Abstract

The invention discloses a PN step of an LED (Light Emitting Diode) chip, the LED chip and a manufacturing method of the PN step. The LED chip comprises a substrate and an epitaxial layer which is formed on the substrate, wherein the epitaxial layer is provided with the PN step, the PN step is covered with an insulation passive film, the upper step surface of the PN step is a P type conducting layer, the lower step surface of the PN step is an N type conducting layer, and a PN step side surface is formed in a way that the upper step surface and the lower step surface are connected; the PN step side surface comprises a first connecting edge which is positioned on the upper step surface and a second connecting edge which is positioned on the lower step surface, the second connecting edge is positioned between the first connecting edge and the end part of the lower step surface, and the PN step side surface is a curved surface or an inclined surface. According to the PN step of the LED chip, the LED chip and the manufacturing method, which are disclosed by the invention, the covering effect of the insulation passive film on the LED chip is facilitated, the turn-on voltage of the LED chip is effectively increased, the leak current is reduced, and the luminous efficiency of the LED chip is effectively increased at the same time.

Description

technical field [0001] The invention relates to a manufacturing technology of an LED chip, in particular to a PN step of the LED chip, the LED chip and a manufacturing method. Background technique [0002] The manufacturing process of the conventional LED chip is mainly as follows: firstly, the N-type conductive layer, the light-emitting layer and the P-type conductive layer are sequentially deposited on the substrate (the existing sapphire material is mainly used), among which, the N-type conductive layer, the light-emitting layer and the P-type The conductive layer constitutes the epitaxial layer (GaN material is mainly used at present), and steps are formed on the epitaxial layer by etching (generally using photolithography) (herein collectively referred to as PN steps), which makes part of the N-type conductive layer of the epitaxial layer The surface is exposed, that is, the upper step surface of the step is a P-type conductive layer, and the lower step surface is an N-...

AI Technical Summary

Problems solved by technology

[0003] However, see figure 1 As shown, the connection surface between the upper step surface 110 and the lower step surface 120 of the PN step 100a in the existing LED chip epitaxial layer 100 (collectively referred to as the PN step side 130 herein) is perpendicular to the upper step surface 110 and the lower step surface 120 Or substantially vertical, resulting in the inability to uniformly cover the PN step side 130 in the subsequent covering of the insulating passivation film, so the covering effect is poor, resulting in the decline of the above-mentioned function of the insulating passivation film, that is, reducing the light output of the LED chip. effect, and at the same time make the turn-on voltage of the LED chip drop, thus increasing the leakage current

Images