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semiconductor processing chamber

A technology for processing chambers and semiconductors, used in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., and can solve problems such as dopant distribution degradation, loosening, etc.

Active Publication Date: 2022-04-01
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been found that when conventional thermal treatments are used to activate boron-doped silicon germanium (SiGe:B) contacts, the strain induced in the channel region can be relaxed and the doping in the channel and source / drain distribution may degrade

Method used

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  • semiconductor processing chamber
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Experimental program
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Embodiment Construction

[0013] figure 1 is a perspective cross-sectional view of a semiconductor processing apparatus 100 according to one embodiment. The device 100 includes a body 102 having two side walls 104 and a floor 108 coupling the two side walls 104 together. Cover 106 is removably coupled to body 102 opposite base plate 108 . The body 102 also has a partition wall 110 that defines two processing chambers 112 and 114 within the body. Semiconductor device 100 may thus be described as a dual chamber device. A gas activator 116 is coupled to the lid 106 for providing activated gas to the processing chambers 112 , 114 . Passage 118 fluidly couples process chambers 112 , 114 together through wall 110 , and outlet 120 of gas activator 116 is in fluid communication with the passage via a port 122 formed in cover 106 .

[0014] Each chamber 112, 114 has a substrate support 124, for simplicity, in figure 1 Only one of the substrate supports is shown in . The substrate support 124 is disposed i...

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PUM

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Abstract

A semiconductor processing apparatus is described having a body having walls defining two processing chambers within the body; passages through the walls between the two processing chambers a fluid coupling between the chambers; a cover removably coupled to the body, the cover having a portal in fluid communication with the pathway; a gas activator coupled to the cover outside the processing chamber, the said gas activator having an outlet in fluid communication with said portal of said lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each heating zone having an embedded heating member; A gas distributor coupled to the cover facing each substrate support; and a thermal control member coupled to the cover at an edge of each gas distributor.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor manufacturing. In particular, embodiments of the present disclosure relate to semiconductor processing devices. Background technique [0002] Semiconductor devices continue to shrink in size. As the critical dimensions of semiconductor devices shrink below 10 nm, new semiconductor materials are being investigated that overcome performance problems that become apparent when using silicon at such scales. Germanium and silicon are increasingly being included together as alloys to improve the semiconducting properties of various components of the device. For example, channel regions, source and drain regions, and contacts for source and drain regions are increasingly fabricated from SiGe alloys. Typical for logic structures, these regions are often doped with a conductivity enhancing material, such as boron. Also typically, the doping process is followed by an activation process...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/54H01L21/02
CPCH01L21/67017H01L21/6719H01L21/67248H01L21/02274H01L21/54H01L21/67098C23C16/4586C23C16/45561C23C16/452C23C16/4412C23C16/4404C23C16/45565H01J37/32477H01J37/32899H01J37/3244
Inventor 阿伦·缪尔·亨特梅兰·贝德亚特尼拉杰·默钱特道格拉斯·R·麦卡利斯特姚东明龙·刚·塞缪尔·陈劳拉·哈夫雷查克
Owner APPLIED MATERIALS INC