Method and apparatus for determining topography parameters of a target structure in a semiconductor device

A target structure, semiconductor technology, applied in the direction of instruments, measuring devices, etc., can solve the problems of poor repeatability, high cost of manual measurement time, etc., to achieve the effect of liberating labor, saving measurement time, and improving economic benefits

Active Publication Date: 2021-09-21
RAINTREE SCI INSTR SHANGHAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Considering the high time cost and poor repeatability of manual measurement, efficient and accurate automatic measurement equipment and methods for semiconductor device morphology parameters are urgently needed in the semiconductor inspection industry

Method used

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  • Method and apparatus for determining topography parameters of a target structure in a semiconductor device
  • Method and apparatus for determining topography parameters of a target structure in a semiconductor device
  • Method and apparatus for determining topography parameters of a target structure in a semiconductor device

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Embodiment Construction

[0037] Preferred embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0038] As used herein, the term "comprise" and its variants mean open inclusion, ie "including but not limited to". The term "or" means "and / or" unless otherwise stated. The term "based on" means "based at least in part on". The terms "one example embodiment" and "one embodiment" mean "at least one example embodiment." The term "another embodiment" means "at least one further embodiment". The terms "first", "second", etc. may refer to di...

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Abstract

In order to automatically and accurately measure the dimensions of semiconductor devices and their constituent parts, the present disclosure provides methods and devices for determining the appearance parameters of target structures in semiconductor devices. The shape parameters of the semiconductor device refer to any size of the structure related to the shape of the semiconductor device, including the critical size of the device, the size of each part of the structure that composes the device, and related angles. A method for determining a topographical parameter of a target structure in a semiconductor device includes providing a reference image including a reference structure corresponding to the target structure. The method also includes determining an outline of the target structure based on the outline of the reference structure and the image including the target structure. Additionally, the method includes determining a topographical parameter of the target structure based on the profile of the target structure. The present disclosure also provides an apparatus for determining a topographical parameter of a target structure in a semiconductor device. The embodiment can accurately realize the batch measurement of the morphology parameters of semiconductor devices.

Description

technical field [0001] Embodiments of the present disclosure generally relate to the field of dimension measurement, and in particular to methods and apparatuses for determining topography parameters of target structures in semiconductor devices. Background technique [0002] The measurement of the shape parameters of semiconductor devices, including the critical dimensions of the device, the total height of the device and the measurement of the dimensions of each component of the device, plays a pivotal role in the semiconductor manufacturing process. By measuring the shape parameters of semiconductor devices in batches, especially the key dimensions, it is possible to count the qualification rate of the produced products and evaluate the working stability of the semiconductor device production line. With the continuous development and innovation of semiconductor technology, the size of semiconductor devices has become smaller and smaller, and the structure has become more ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B21/20
CPCG01B21/20
Inventor 张晓琳符祖标施耀明徐益平
Owner RAINTREE SCI INSTR SHANGHAI
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