A preparation method of large-area perovskite thin film and a battery module thereof

A perovskite and large-area technology, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problem that large-area perovskite battery components cannot be further enlarged, so as to save consumption and save consumption Effect

Active Publication Date: 2018-12-28
广东光晶能源科技有限公司
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Problems solved by technology

Usually, the effective preparation process is one-step anti-solvent engineering. However, this method can only be used effectively on small-area perovskite batteries, and cannot be further scaled up to prepare large-area perovskite battery components.

Method used

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  • A preparation method of large-area perovskite thin film and a battery module thereof
  • A preparation method of large-area perovskite thin film and a battery module thereof
  • A preparation method of large-area perovskite thin film and a battery module thereof

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Embodiment 1

[0028] A method for preparing a large-area perovskite film, comprising the steps of:

[0029] (1) Prepare the transparent conductive substrate: first cut the FTO conductive glass into the size required for the experiment (10cm x 10cm), then ultrasonically clean the glass with glass cleaning solution, pure water, ethanol, and acetone for 15 minutes, and then use a nitrogen gun Blow dry to obtain the conductive glass substrate used in the experiment;

[0030] (2) Preparation of the electron transport layer: add 5 g of urea, 5 mL of hydrochloric acid, and 100 μL of thioglycolic acid into 400 mL of deionized water and disperse evenly for later use; dissolve an appropriate amount of stannous sulfate in the solution to form a solution with a concentration of 2 mM; take 100 μL of the stannous sulfate solution Pour it into a glass container, then immerse the conductive substrate in the solution, put the glass container in an oven at 70°C for 2 hours, take it out and wash it with pure ...

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Abstract

The invention belongs to the field of perovskite solar cells, in particular to a preparation method of a large-area perovskite thin film and a battery module thereof. The preparation method comprisesthe following steps of: cleaning a transparent conductive substrate and drying for standby; depositing a tin oxide electron transport layer by chemical bath method; performing uniform coating and depositing of the perovskite precursor solution by slit extrusion-scraping method, and then obtaining the perovskite absorbing layer by a spin-coating moving droplet antisolvent method; using a green solvent to prepare a Spiro-OMeTAD solution, preparing the hole transport layer on the perovskite light-absorbing layer by a slit extrusion scraping method, and evaporating the metal electrode on the holetransport layer. As the precursor solution of the perovskite deposit is extruded and scraped by the slit, the perovskite solution can be spread effectively and the consumption is saved; the antisolvent can be uniformly dropped on the perovskite film by moving the antisolvent droplet, which can effectively widen the extraction area of perovskite film and save the use of antisolvent.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, and in particular relates to a method for preparing a large-area perovskite thin film and a battery component thereof. Background technique [0002] Environmental pollution and energy crisis are the main challenges facing society today, and the development and application of renewable energy has broad prospects. As an inexhaustible clean energy, solar energy is of great significance to solve environmental pollution and save energy crisis. Among them, photovoltaic cells are an effective way to utilize solar energy. From the first generation of crystalline silicon solar cells to the third generation of thin-film solar cells, the field of solar cells is showing vigorous development. Although the photoelectric conversion efficiency of various inorganic thin-film solar cells such as crystalline silicon exceeds 20%, and has a very mature preparation process, the preparation process consumes high ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K30/10Y02E10/549
Inventor 程一兵卜童乐钟杰黄福志
Owner 广东光晶能源科技有限公司
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