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Substrate processing apparatus and substrate processing method

A substrate processing device and technology for processing space, which are applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems such as the inability to adjust the plasma density.

Active Publication Date: 2021-05-14
SEMES CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] refer to figure 1 , in the conventional ICP type, the current supplied to the antenna and the phase of the current are controlled in order to control the density of the plasma applied to the substrate, and the density of the plasma supplied to the edge region of the substrate cannot be adjusted

Method used

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  • Substrate processing apparatus and substrate processing method
  • Substrate processing apparatus and substrate processing method
  • Substrate processing apparatus and substrate processing method

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Embodiment Construction

[0042] The embodiments of the inventive concept may be modified in various forms, and the scope of the inventive concept should not be construed as being limited to the embodiments of the inventive concept described below. The embodiments of the inventive concept are provided in order to more fully describe the inventive concept to those skilled in the art. Therefore, the shapes of components and the like in the drawings are exaggerated to emphasize clearer description.

[0043] figure 2 It is a view exemplarily showing a substrate processing apparatus 10 according to an embodiment of the present inventive concept.

[0044] refer to figure 2 , the substrate processing apparatus 10 processes the substrate W by using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. Referring to FIG. The substrate processing apparatus 10 may include a process chamber 100 , a support unit 200 , a gas supply unit 300 , a plasma gene...

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Abstract

A substrate processing device is disclosed. The substrate processing apparatus includes: a process chamber having a processing space inside; a supporting unit configured to support the substrate in the processing space; a gas supply unit configured to supply processing gas to the processing space; and a plasma generating unit configured to generate plasma from the gas in the processing space. Wherein, the plasma generating unit includes: a high-frequency power supply; a high-frequency antenna, which applies a current from the high-frequency power supply to the high-frequency antenna; The antenna is applied to the additional antenna.

Description

[0001] Cross References to Related Applications [0002] This application claims the Korean Patent Application No. 10-2017-0121706 filed September 21, 2017, filed with the Korean Intellectual Property Office under 35 U.S.C. Priority of Korean Patent Application No. 10-2017-0154769, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] Embodiments of the inventive concepts described herein relate to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus capable of uniformly supplying plasma to all regions on a substrate and a substrate processing method thereof. Background technique [0004] A semiconductor manufacturing process may include a process of treating a substrate using plasma. For example, in an etching process of a semiconductor process, plasma may be used to remove a thin film on a substrate. [0005] In order to use plasma in the substrate pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32009H01J37/32431H01J37/3211H01J37/32174H01J37/32449H01L21/67103H01L21/67109H01L21/6831H01J37/32458H01J37/32568H01J37/32633H01J37/32642H01J37/32724H01J37/32834H01L21/6833
Inventor 奥格森·加尔斯蒂安哈鲁特温·梅利基扬金荣斌安宗奂
Owner SEMES CO LTD
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