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Memory device including a circuit for detecting word line defect and operating method thereof

A technology for a storage device and a word line, applied to a storage device including a circuit for detecting word line defects and its operation field, can solve problems such as the deterioration of the operation performance of the storage device

Pending Publication Date: 2019-05-03
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since these defects lead to deterioration of the operational performance of memory devices, research to improve the defects is required

Method used

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  • Memory device including a circuit for detecting word line defect and operating method thereof
  • Memory device including a circuit for detecting word line defect and operating method thereof
  • Memory device including a circuit for detecting word line defect and operating method thereof

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Embodiment Construction

[0027] Advantages and features of the present disclosure and methods of achieving them can be more easily understood by referring to the following detailed description of the preferred embodiments and accompanying drawings. However, this disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the thickness of layers and regions are exaggerated for clarity.

[0028] figure 1 is a block diagram illustrating a non-volatile storage system according to some embodiments.

[0029] refer to figure 1 , the nonvolatile storage system includes a memory controller 200 and a nonvolatile storage device 100 . figure 1 Examples of non-volatile storage systems shown may include flash-based data storage media such as memory cards, USB memory, and SSDs (Solid State Drives), but are not limited to these examples.

[0030] The memory controller 200 may be connected to a host (HOST) and the nonvolatile memor...

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Abstract

A memory device comprises a memory cell array including a first memory cell disposed on a substrate and a second memory cell above the first memory cell; a first word line connected to the first memory cell and a second word line connected to the second memory cell, the second word line disposed above the first word line; and a word line defect detection circuit configured to monitor a number of pulses of a pumping clock signal while applying a first voltage to the first word line to detect a defect of the first word line. The voltage generator is configured to apply a second voltage differentfrom the first voltage to the second word line for programming the second memory cell when the number of pulses of the pumping clock signal is smaller than a reference value.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2017-0140000 filed in the Korean Intellectual Property Office on October 26, 2017, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The present disclosure relates to a memory device including a circuit for detecting a word line defect and a method of operating the same. Background technique [0004] A storage device is a storage device that can store data and that can be read when needed. Storage devices can be roughly classified into nonvolatile memory (NVM) in which stored data does not disappear even when power is not supplied, and volatile memory (VM) in volatile memory (VM). In nonvolatile memory, the stored data disappears when no power is supplied. [0005] In order to control a plurality of memory cells provided in the memory device, various wirings may be provided and used inside the me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/12G11C29/30G11C29/00G11C16/12
CPCG11C29/12005G11C29/12015G11C16/0483G11C16/08G11C16/10G11C16/30G11C16/3445G11C16/3459G11C2029/1202G11C5/145G11C16/12G11C16/14G11C29/025G06F3/061G06F3/0679G11C8/08
Inventor 李在润权俊秀金炳秀金水龙朴商秀朴一汉李康斌李宗勋崔那荣
Owner SAMSUNG ELECTRONICS CO LTD
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