Microcrystalline organic semiconductor film, organic semiconductor transistor, and method for producing organic semiconductor transistor

一种有机半导体膜、微晶的技术,应用在半导体/固态器件制造、晶体管、半导体器件等方向,能够解决载流子迁移率降低、有机半导体晶体管性能偏差、晶体结构龟裂等问题

一种有机半导体膜、微晶的技术,应用在半导体/固态器件制造、晶体管、半导体器件等方向,能够解决载流子迁移率降低、有机半导体晶体管性能偏差、晶体结构龟裂等问题

CN109791983AActive Publication Date: 2019-05-21FUJIFILM CORP

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  • Microcrystalline organic semiconductor film, organic semiconductor transistor, and method for producing organic semiconductor transistor
  • Microcrystalline organic semiconductor film, organic semiconductor transistor, and method for producing organic semiconductor transistor
  • Microcrystalline organic semiconductor film, organic semiconductor transistor, and method for producing organic semiconductor transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0373] Although the present invention will be described in further detail based on examples, the present invention is not limited to the following examples.

Synthetic example 1

[0374] [Synthesis Example 1] Synthesis of Compound 1

[0375] In the following reaction diagram, Bu represents butyl, Et represents ethyl, THF represents tetrahydrofuran, DMF represents N,N-dimethylformamide, TMP represents tetramethylpiperidine, dppf represents 1,1'-bis( Diphenylphosphino)ferrocene.

[0376] -Synthesis of Intermediate 1a-

[0377] [chemical formula 8]

[0378]

[0379] 2,3-Dibromothiophene n-butyl lithium solution (15.9 g, 65.8 mmol) was dissolved in 120 ml of diethyl ether, and n-butyl lithium (1.6 M solution) was added dropwise to the solution while stirring at -90°C. After 30 minutes, a solution obtained by dissolving 2,5-selenophenedicarboxyaldehyde (6.00 g, 32.1 mmol) in 50 ml of tetrahydrofuran was added dropwise, stirred at -78° C. for 20 minutes, and then heated to room temperature. The reaction liquid was quenched with water, and the organic layer was extracted with diethyl ether, and dried over magnesium sulfate. After concentrating with an e...

Synthetic example 2~108

[0406] [Synthesis Examples 2-108] Synthesis of Compounds 2-108

[0407] Compounds 2 to 108 shown in the table below were synthesized in the same manner as in Synthesis Example 1 above, referring to the Examples in JP-A-2015-195362.

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PUM

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Abstract

To provide: an organic semiconductor film which is capable of effectively inhibiting the formation and expansion of cracks, even if patterned or exposed to high heat; an organic semiconductor transistor in which the organic semiconductor film is used; and a method for producing the organic semiconductor transistor. Provided are: a microcrystalline organic semiconductor film including a compound which has a molecular weight of 3000 or lower, and which is represented by general formula (1), the size of crystal domains in said microcrystalline organic semiconductor film being at least 1 nm, but not more than 100 nm; an organic semiconductor transistor in which the organic semiconductor film is used; and a method for producing the organic semiconductor transistor. X, Y, and Z represent specific ring-forming atoms. R1 and R2 each represent hydrogen, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each represent a halogen, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n are integers in the range of 0-2.

Description

technical field [0001] The invention relates to a microcrystalline organic semiconductor film, an organic semiconductor transistor and a method for manufacturing the organic semiconductor transistor. Background technique [0002] In logic circuits such as liquid crystal displays, organic electroluminescence displays, and other displays, RFID (radio frequency identifier: RF tags), and memories, tiny transistors are accumulated as switching elements. An organic semiconductor transistor (field-effect transistor) using an organic semiconductor compound as a semiconductor layer can be reduced in weight and is also excellent in flexibility. Therefore, it is attracting attention as a next-generation transistor replacing a transistor having a silicon-based semiconductor layer, and research and development are underway. [0003] In improving the performance of organic semiconductor transistors, improvement of carrier mobility is an important factor. By increasing the carrier mobili...

Claims

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Application Information

Patent Timeline
21 May 2019
Publication
CN109791983A
IPC
H01L51/40; H01L21/336; H01L29/786; H01L51/05; H01L51/30
CPC
H01L29/786; C07D517/14; C07D493/14; C07D495/14; C07D513/14; C07D498/14; H10K71/164; H10K85/653
Inventors
后藤崇; 福崎英治