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Semiconductor device and method for forming metal gate thereof

A metal gate and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of amorphous silicon condensation and crystallization, and the reduction of the protective effect of amorphous silicon on the work function layer.

Active Publication Date: 2021-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the prior art, when the high-temperature annealing treatment is performed, the amorphous silicon is prone to condensation and crystallization, and then part of the work function layer is exposed due to condensation, resulting in a decrease in the protective effect of the amorphous silicon on the work function layer.

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  • Semiconductor device and method for forming metal gate thereof
  • Semiconductor device and method for forming metal gate thereof
  • Semiconductor device and method for forming metal gate thereof

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Embodiment Construction

[0026] In the existing method for forming metal gates, polysilicon is firstly used to form a dummy gate structure on a semiconductor substrate, and the dummy gate structure is removed to form a groove between gate sidewalls. A high-K dielectric layer and a work function layer are formed inside, and after the work function layer is annealed, the surface of the work function layer in the groove is filled with metal to form the metal gate. In a specific implementation, a layer of amorphous silicon is usually formed on the surface of the work function layer in advance, so as to protect the work function layer during the annealing treatment, and then the amorphous silicon is removed after the annealing treatment.

[0027] Figure 1 to Figure 4 Shown is a schematic diagram of a device cross-sectional structure corresponding to each step in a method for forming a metal gate of a semiconductor device.

[0028] refer to figure 1 , provide a semiconductor substrate 100, the semiconduc...

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Abstract

A semiconductor device and a metal gate forming method thereof are provided. The method comprises the following steps: providing a semiconductor substrate with a groove in which a high-K dielectric layer and a work function layer on the surface of the high-K dielectric layer are formed; forming amorphous silicon on the surface of the work function layer; oxidizing the amorphous silicon to form anoxide layer on the surface of the amorphous silicon; annealing the work function layer under the protection of the oxide layer; and filling the groove with metal to form a metal gate. The scheme of the invention can improve the protective effect of the amorphous silicon on the work function layer in the process of high-temperature annealing.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a method for forming a metal gate. Background technique [0002] In traditional MOS transistor technology, heavily doped polysilicon is usually used as the gate material. With the development of integration and miniaturization of semiconductor devices, problems such as increased leakage and gate loss are prone to occur. In order to solve the above problems, a metal gate (Metal Gate) process has received extensive attention. [0003] In the existing method for forming metal gates, polysilicon is firstly used to form a dummy gate structure on a semiconductor substrate, and the dummy gate structure is removed to form a groove between gate sidewalls. A high-K dielectric layer and a work function layer are formed inside, and after the work function layer is annealed, the surface of the work function layer in the groove is filled with metal to for...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L29/06H01L29/78
Inventor 林静蔡国辉
Owner SEMICON MFG INT (SHANGHAI) CORP