Method for preparing ZnO@ZIF-8 compound, ZnO@ZIF-8 compound and gas sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHONGQING UNIV
- Publication Date
- 2019-07-05
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a method for preparing a ZnO@ZIF-8 compound, a ZnO@ZIF-8 compound and a gas sensor, especially a method for preparing a micron-sized capsule-like ZnO@ZIF-8 compound, the ZnO@ZIF-8 compound Object and gas sensors can be used in the field of electrical equipment insulation on-line monitoring and fault diagnosis. Background technique
[0002] Metal oxide semiconductor materials have the advantages of being sensitive to a variety of gases, low cost, and fast response, so they have become a research hotspot today. ZnO is one of the most representative metal oxides. Although pure zinc oxide is generally sensitive to a variety of gases, its response value is not high, its selectivity is poor, and its detection limit is low. Modified treatment.
[0003] Metal-organic frameworks (MOFs) are a class of crystalline porous materials with a periodic network structure formed by self-assembly of inorganic metal centers (metal ions or...