Monitoring method in crystal growth furnace and crystal growth furnace

Abstract

The invention provides a monitoring method in a crystal growing furnace and the crystal growing furnace. The method comprises the following steps of: receiving first image data, second image data andthird image data of an image device in each window, wherein the first image data is image data of a monocrystalline silicon rod, the second image data is the image data of molten polycrystalline silicon, and the third image data is the image data of a crucible; receiving size data acquired by a size measuring device in the each window, wherein the size data comprises diameter data of the monocrystalline silicon rod; receiving displacement data of a crystal pulling line acquired by a displacement acquisition device; receiving environment information acquired by an environment monitoring devicein the each window; generating a three-dimensional image of the monocrystalline silicon rod based on the first image data, the diameter data of the monocrystalline silicon rod and the displacement data; and storing the environment information corresponding to each coordinate point according to a mapping relation between the each coordinate point and the environment information on the three-dimensional image. By the adoption of the monitoring method in the crystal growing furnace and the crystal growing furnace, the condition of each orientation in the crystal growing furnace can be observed through the three-dimensional visual image, and comprehensive monitoring is achieved.

Description

technical field [0001] The invention relates to the technical field of monitoring, in particular to a monitoring method in a crystal growth furnace and a crystal growth furnace. Background technique [0002] Monocrystalline silicon is an important raw material in the fields of semiconductor integrated circuits, sensors, and photovoltaics. Monocrystalline silicon can be obtained through the seeding process of a crystal growth furnace. Single crystal silicon with uniform lattice orientation can be obtained by seeding polysilicon with disordered lattice orientation. During the seeding process, the environment in the crystal growth furnace plays a vital role in the orientation of the crystal lattice, and the orientation of the crystal lattice directly affects the quality of single crystal silicon. Therefore, in the process of preparing a single crystal, it is necessary to detect the environment in the crystal growth furnace in real time. [0003] At present, a single window is...

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Problems solved by technology

[0005] The purpose of the present invention is to, aiming at the deficiencies in the above-mentioned prior art, provide a kind of monitoring method in the crystal growth furnace and the crystal growth furnace, to solve the problem that there is a monitoring dead angle in the crystal growth furnace, and it is difficult to comprehensively monitor the crystallization environment in the crystal growth furnace question

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