Method for monitoring temperature control performance of annealing equipment
A technology of annealing equipment and annealing temperature, which is used in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., and can solve problems such as inability to accurately reflect equipment conditions, not very effective and accurate, and poor uniformity.
Active Publication Date: 2021-05-14
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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figure 1 It is a schematic diagram of monitoring the sheet resistance of the wafer after low-temperature annealing and its unevenness as a function of temperature. It can be seen that in the range of 420 degrees to 470 degrees, although the sheet resistance increases linearly, the uniformity is too high. In the range of 490-550 degrees, although the uniformity is very good, the resistance value of the square resistance remains basically unchanged, and it is difficult to obtain the change of the working temperature; within the range of 550-600 degrees and The situation is similar for the range of 420°-470°
[0005] Therefore, the existing monitoring methods are not very effective and accurate in monitoring the actual working temperature of the rapid annealing equipment at the low temperature annealing temperature
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[0029] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description.
[0030] As mentioned in the background art, the existing monitoring methods cannot obtain effective and accurate results when monitoring the actual working temperature of the rapid annealing equipment. In order to improve the effectiveness and accuracy of monitoring the actual working temperature of the rapid annealing equipment, an embodiment of the present invention provides a method for monitoring the temperature control performance of the annealing equipment. figure 2 It is a schematic flowchart of a method for monitoring the temperature control performance of annealing equipment according to an embodiment of the present invention. Such as figure 2 As shown, the method for monitoring the temperature control performance of...
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The invention provides a method for monitoring the temperature control performance of annealing equipment, comprising: providing a monitoring wafer, which has a linear relationship between the thermal wave variation before and after annealing and the annealing temperature; measuring the temperature of the monitoring wafer at The heat waves before and after annealing at the set temperature are obtained to obtain the first heat wave value and the second heat wave value; according to the difference between the first heat wave value and the second heat wave value and the linear relationship, the difference with the The corresponding actual annealing temperature; compare the deviation degree between the set temperature and the actual annealing temperature to judge the temperature control performance of the monitored annealing equipment. The method for monitoring the temperature control performance of the annealing equipment provided by the invention can effectively and accurately monitor the temperature control performance of the annealing equipment during low-temperature annealing.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for monitoring the temperature control performance of annealing equipment. Background technique [0002] In the field of ultra-large-scale integrated circuits, with the reduction of chip size design rules and the scaling of devices, the limit requirements for contact resistance are getting higher and higher. The industry needed to find new alternatives, and cobalt salicide was found. During its preparation, it is usually necessary to monitor the conditions during production. For example, in the cobalt silicide-related process, including rapid thermal annealing (RTA) using rapid annealing equipment, if the annealing temperature of the rapid annealing equipment is unstable, it will have an important impact on the formed cobalt silicide and semiconductor devices. Taking flash memory as an example, if the actual temperature of the rapid annealing equipment deviates ...
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IPC IPC(8): H01L21/67H01L21/66
CPCH01L21/67098H01L21/67248H01L22/12
Inventor 李楠
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP