Packaging structure of a power device and manufacturing method thereof

Abstract

The invention relates to the field of IGBT device crimping and package. A package structure of a crimping power device comprises an upper end cover, a lower end cover, an insulation shell, a base array, a sealing shell, liquid-state metal, an IGBT sub-unit and a communication groove, wherein the insulation shell is sandwiched between the upper end cover and the lower end cover to form a cavity, the base array on the lower cover plate comprises a plurality of bases, the plurality of bases are divided into multiple groups, each group of base communicate with each other by the communication groove, each base and the communication groove are filled with the liquid-state metal, and the liquid-state metal can be used as a power end conductor of the IGBT sub-unit and also can be used for providing a moving space in a vertical direction for the IGBT sub-unit so as to absorb remaining vertical pressure. The invention also provides a manufacturing method of the package structure. Due to the application of the liquid-state metal, a potential risk such as chip damage caused by excessively large vertical pressure is omitted, and dual-surface cooling can be achieved.

Description

technical field [0001] The invention relates to the field of packaging of semiconductor devices, in particular to the field of crimping and packaging of IGBT devices. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) has the advantages of high input impedance and low conduction voltage drop of GTR (Power Transistor). The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very su...

AI Technical Summary

Problems solved by technology

At this time, the thickness uniformity of the molybdenum sheet, the thickness uniformity of the sintered material, and even the thickness uniformity of the chip itself all affect the consistency of the height of the sub-module, such as Chinese invention patent application CN 108183090 A (a crimping chip independently formed Type IGBT module and preparation method), these sub-modules will bring new challenges of uniform pressure when crimping and assembling, see figure 1

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