Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Microstereoscopic relief vertical stripe weave for knitted fabric and knitting method of microstereoscopic relief vertical stripe weave

A three-dimensional embossing, knitted fabric technology, applied in knitting, weft knitting, textiles and papermaking, etc., can solve the problems of not fully meeting the needs of product design and development, lack of technical development breadth and depth, etc., and achieve good design concepts and high aesthetics. Value, good adaptability

Pending Publication Date: 2019-10-25
LANBOZHIYEPEIXUNXUEXIAOTONGXIANGYOUXIANGONGSI
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as one of the important links in product design and development, the organizational structure of knitted fabrics cannot fully meet the needs of product design and development.
In addition, the breadth and depth of its technical development in terms of visual effects are still insufficient, and it is urgent to strengthen the development of organizational structure in this area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microstereoscopic relief vertical stripe weave for knitted fabric and knitting method of microstereoscopic relief vertical stripe weave
  • Microstereoscopic relief vertical stripe weave for knitted fabric and knitting method of microstereoscopic relief vertical stripe weave
  • Microstereoscopic relief vertical stripe weave for knitted fabric and knitting method of microstereoscopic relief vertical stripe weave

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The micro-stereo-relief vertical texture of the knitted fabric described in this embodiment, such as figure 1 , figure 2 As shown, it includes a plain stitch 1 and an anti-flat stitch 2, the flat stitch 1 is composed of the front stitch 3 of the spacer, the anti-flat stitch 2 is composed of the reverse stitch 4 of the spacer, and the front of the spacer The stitches 3 and the spacer back stitches 4 are alternately arranged on the wale.

[0028] The weaving method of the micro-stereo-relief vertical weave of the knitted fabric described in this embodiment, such as image 3 As shown, a kind of flat knitting machine is used, and the flat knitting machine includes a front needle bed 5 and a rear needle bed 6. The front needle bed 5 and the rear needle bed 6 are opposite to each other and extend parallel to both sides. There are yarn feeder A and yarn feeder B; the knitting method, such as image 3 shown, including the following steps:

[0029] (a) Yarn feeder A moves f...

Embodiment 2

[0041] The micro-stereo-relief vertical texture of the knitted fabric described in this embodiment, such as Figure 4 As shown, in addition to the features described in Embodiment 1, in order to realize the weaving of various patterns and patterns through this weave, the plain stitch 1 and the reverse jersey 2 can use yarns 7 of different thicknesses.

[0042] In this embodiment, thick yarn 71 is used for plain stitch 1, and fine yarn 72 is used for reverse flat stitch 2, which can form stripes of different shades on the surface of the fabric to achieve an aesthetic effect.

[0043] In the weaving method of the micro three-dimensional relief vertical texture of the knitted fabric described in this embodiment, during the weaving process, the yarn feeder A uses thick yarn 71 when feeding yarn, and the yarn feeder B uses thin solid yarn 72 when feeding yarn .

[0044] The thick yarn 71 and the thin yarn 72 mentioned in this embodiment only refer to the comparison between the two...

Embodiment 3

[0046] The micro three-dimensional embossed vertical weave of the knitted fabric described in this embodiment, in addition to the characteristics described in Embodiment 1, in order to realize the weaving of various patterns and patterns through this weave, the normal flat stitch 1 and the reverse flat stitch 2 Yarns 7 of different thicknesses can be used.

[0047] In this embodiment, the plain stitch 1 uses thin yarns 72, and the reverse flat stitch 2 uses thick yarns 71, which can form stripes of different shades on the surface of the fabric to achieve an aesthetic effect.

[0048] In the weaving method of the micro three-dimensional relief vertical texture of the knitted fabric described in this embodiment, during the weaving process, the yarn feeder A uses the fine yarn 72 when feeding the yarn, and the yarn feeder B uses the thick yarn 71 when feeding the yarn .

[0049] The thick yarn 71 and the thin yarn 72 mentioned in this embodiment only refer to the comparison betw...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses microstereoscopic relief vertical stripe weave for knitted fabric. The microstereoscopic relief vertical stripe weave comprises front plain stitch and reverse plain stitch, wherein the front plain stitch is formed by spaced front stitch wales, the reverse plain stitch is formed by spaced reverse stitch wales, and the spaced front stitch wales and the spaced reverse stitch wales are arranged in a staggered manner. The invention further discloses a knitting method of the microstereoscopic relief vertical stripe weave for the knitted fabric. According to the method, the front plain stitch and the reverse plain stitch in staggered arrangement are knitted in by alternate plain knitting and reverse stacking on a front needle bed and a back needle bed. According to the microstereoscopic relief vertical stripe weave for the knitted fabric and the knitting method of the microstereoscopic relief vertical stripe weave, the microstereoscopic relief vertical stripe effect can be shown on the fabric surface, higher aesthetic value is obtained, the weave structure can only ravel in the inverse knitting direction, is low in raveling property, has longer service life, huge market potential and high adaptability, can meet multiple pattern demands and pushes international influence of the knitting industry of China.

Description

technical field [0001] The invention relates to a textile and a method thereof, in particular to a micro-stereo-relief vertical grain structure of knitted fabric and a weaving method thereof. Background technique [0002] The basic organization, changing organization and other organizational structures of flat knitted fabrics have their unique aesthetic characteristics, and the composite organization provides richer variability and deeper re-development in the development of knitted fabrics. However, as one of the important links in product design and development, the knitted fabric structure cannot fully meet the needs of product design and development with its traditional structure. In addition, the breadth and depth of its technical development in terms of visual effects are still insufficient, and it is urgent to strengthen the development of organizational structure in this area. Contents of the invention [0003] The object of the present invention is to provide a m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): D04B1/10D04B1/12
CPCD04B1/102D04B1/12
Inventor 叶明安顾洪德杨培水根妹沈卫国
Owner LANBOZHIYEPEIXUNXUEXIAOTONGXIANGYOUXIANGONGSI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products