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A method of penetrating and filling a through-hole with a jet

A technology of jet flow and hole wall, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of complex steps and many types of equipment, and achieve simple steps, fewer types of equipment, and is conducive to miniaturization and high speed Effect

Active Publication Date: 2021-09-24
HENAN MECHANICAL & ELECTRICAL VOCATIONAL COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is that when the formation of the through hole and the filling of the conductive metal are carried out in two steps, the steps are complicated and there are many types of equipment. In order to solve the above problems, the present invention provides a method for penetrating and filling the through hole with a jet

Method used

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  • A method of penetrating and filling a through-hole with a jet
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  • A method of penetrating and filling a through-hole with a jet

Examples

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Effect test

Embodiment 1

[0051]The technology of realizing the interconnection of stacked chips in the three-dimensional integrated circuit penetrates silicon via technology. The jet material is simple metal copper, and the panel material is a 12-inch Si wafer. The method of generating the jet is the pressurized injection method after heating and melting. The specific steps are as follows ,

[0052] (1) Generating high-temperature jets: melting the jet material Cu to generate continuous high-temperature jets 1 with controllable cross-sectional shape and speed. High-temperature jets 1 have 4 strands. The front is small and the rear is large, the temperature of the high-temperature jet 1 is 1200°C, and the initial velocity of the jet is 200m / s;

[0053] (2) Penetrating panel: The number of panels is 2 layers. The high-temperature jet 1 penetrates through the first layer panel 2. The axial section of the penetrated part is wedge-shaped. The second layer panel 3 penetrates the second layer panel 3. After...

Embodiment 2

[0057] The technology of realizing the interconnection of stacked chips in the three-dimensional integrated circuit uses copper-tin alloy as the material of the jet through silicon via technology, and the material of the panel is an 8-inch Si wafer. The method of generating the jet is pressurized injection after heating and melting. The specific steps are ,

[0058] (1) Generating high-temperature jets: melting jet materials Cu and Sn alloys to generate continuous high-temperature jets 1 with controllable cross-sectional shape and speed. High-temperature jets 1 have two strands. 1 The cross-sectional size is small at the front and large at the back, the temperature of the high-temperature jet 1 is 1300°C, and the initial velocity of the jet is 300m / s;

[0059] (2) Penetrating panel: The number of panels is 4 layers. The high-temperature jet 1 penetrates through the first panel 2. The axial cross-section of the penetrated part is wedge-shaped. The second layer panel 3 penetrat...

Embodiment 3

[0063] The technology of realizing the interconnection of stacked chips in a three-dimensional integrated circuit uses simple copper as the material of the jet through silicon via technology, and the material of the panel is a 6-inch Si wafer. The method of generating the jet is the pressurized injection method after heating and melting. The specific steps are as follows:

[0064] (1) Generating high-temperature jets: Melting jet material elemental copper to generate continuous high-temperature jets 1 with controllable cross-sectional shape and speed. High-temperature jets 1 have 6 strands. The size is small at the front and large at the back, the temperature of the high-temperature jet 1 is 1100°C, and the initial velocity of the jet is 350m / s;

[0065] (2) Penetrating panel: The number of panels is 3 layers. The high-temperature jet 1 penetrates through the first layer panel 2. The axial section of the penetrated part is wedge-shaped. The second layer panel 3 penetrates the ...

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Abstract

A method for penetrating and filling through-holes with jets, including generating high-temperature jets, penetrating panels, enlarging apertures of jets, and solidifying jets to fill through-holes, the technology of through-silicon vias for stacking chips in existing three-dimensional integrated circuits to achieve interconnection Among them, the formation of the through hole and the conductive metal are carried out in two steps, the key steps are complicated and there are many types of equipment. The invention realizes penetrating the panel, enlarging the hole diameter and filling the through hole at one time after the high-temperature jet flow is generated. Not only the steps are simplified, but also the hole wall can form the required insulating layer under the high temperature oxidation of the jet. The method has simple steps and few types of equipment, is a novel and convenient method for forming and filling through holes, and is beneficial to the miniaturization and high speed of integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional packaging, and in particular relates to a method for penetrating and filling a through hole with a jet. Background technique [0002] Through silicon via technology (TSV for short) is a technology for interconnecting stacked chips in a three-dimensional integrated circuit. Both the formation of the through hole and the filling of the conductive metal in the above through hole are key steps of the TSV, which are performed in two steps in the prior art. Chinese patent (application number 201810416195.6) discloses a through-silicon via structure and its preparation method. The through-hole is completed by etching, and the filling of conductive metal is completed by sputtering and electroplating. The steps are complicated and there are many types of equipment. Contents of the invention [0003] The technical problem to be solved by the present invention is that when the formation of the t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76831H01L21/76877
Inventor 王云飞张黎燕高志廷徐延勇严剑冰孟银娜赵伟伟
Owner HENAN MECHANICAL & ELECTRICAL VOCATIONAL COLLEGE