Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional memory and its forming method and control method

A control method and memory technology, applied in read-only memory, static memory, information storage, etc., can solve the problem of low storage density of storage units and achieve the effect of improving storage performance

Active Publication Date: 2022-03-18
YANGTZE MEMORY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a three-dimensional memory and its forming method and control method, which are used to solve the problem of low storage density of storage units in the prior art, so as to improve the storage performance of the three-dimensional memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory and its forming method and control method
  • Three-dimensional memory and its forming method and control method
  • Three-dimensional memory and its forming method and control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] The specific implementation of the three-dimensional memory provided by the present invention, its forming method, and its control method will be described in detail below in conjunction with the accompanying drawings.

[0057] In a three-dimensional memory, bit line-channel plug-channel layer-epitaxial semiconductor layer (Selective Epitaxial Growth, SEG)-substrate-array common source layer (Array Common Source, ACS) together constitute a carrier path. When the information reading operation is performed on the storage unit in the three-dimensional memory, if the current in the path is conducted, the read value is "1"; if the current in the path is not conducted, the read value is "0". ".

[0058] Most of the current three-dimensional memories use TLC (Triple-Level Cell, three-layer storage unit) programming method, each physical storage unit can only store 3 bits of information, and the storage density is low, which limits the development of three-dimensional memory st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory, a forming method and a control method thereof. The three-dimensional memory includes: a substrate with a stack structure on the substrate, a plurality of channel holes passing through the stack structure, and a storage string filled in each of the channel holes; several first plugs, one filled in part of the channel hole and connected to the top of the memory string in the channel hole, the first plug has first dopant ions; several second plugs are filled in one by one In the remaining channel holes in the stack structure, and connected to the top of the storage strings in the channel holes, the second plug has second doping ions, and the first doping ions opposite to the conductivity type of the second dopant ions. The invention increases the storage density of the storage unit at low manufacturing cost and improves the storage performance of the three-dimensional storage.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory, a forming method and a control method thereof. Background technique [0002] As technology develops, the semiconductor industry is constantly seeking new ways to produce a greater number of memory cells per memory die in a memory device. In non-volatile memory, such as NAND memory, one way to increase the memory density is by using vertical memory arrays, that is, 3D NAND (three-dimensional NAND) memory; 32 layers developed to 64 layers, or even higher layers. [0003] As the market's requirements for storage density continue to increase, the industry is developing programming methods with more programming states so that each physical storage unit (cell) can represent more bits of information. However, the realization of more programming states has higher requirements on the formation process of a single memory cell and the unifor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/1157H01L27/11582G11C16/04G11C16/24
CPCG11C16/0483G11C16/24H10B43/35H10B43/27
Inventor 王启光
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com