IGBT parallel driving adaptive circuit and circuit board

Abstract

The invention belongs to the technical field of IGBT driving, and provides an IGBT parallel driving adaptive circuit. In the circuit, one end of a resistor R1 is electrically connected with the collector electrode of a first IGBT, one end of a resistor R5 is electrically connected with the collector electrode of a second IGBT, and the other end of the resistor R1 is electrically connected with theother end of the resistor R5; one end of a resistor R2 is electrically connected with the gate electrode of the first IGBT, one end of a resistor R6 is electrically connected with the gate electrodeof the second IGBT, and the other end of the resistor R2 is electrically connected with the other end of the resistor R6; and one end of a resistor R3 is electrically connected with the emitter electrode of the first IGBT, one end of a resistor R7 is electrically connected with the gate electrode of the second IGBT, and the other end of the resistor R3 is electrically connected with the other endof the resistor R7. The currents can be balanced dynamically, the switching time of the IGBTs is balanced, and a gate electrode loop of a parallel unit is optimized, so that a lead wire of the gate electrode loop is shorter, the loop area is small, the impedance of a driving loop is low, and the anti-jamming capability is good.

Description

technical field [0001] The invention belongs to the technical field of IGBT driving, and particularly relates to an IGBT parallel driving adaptation circuit and a circuit board. Background technique [0002] At present, IGBTs with high power levels are commonly used in high-power drives, but IGBTs with higher power levels on the market have less output, often higher costs, and longer delivery times. To avoid these effects, the use of IGBT parallel circuits is a very important advantage approach. For high-power drives, multiple IGBTs with smaller power levels are used in parallel to form a basic unit to replace a single high-power level IGBT. [0003] In the application of IGBT parallel connection, due to the inconsistent parameters of the IGBT and its driving circuit, the current flowing through each branch in the IGBT parallel circuit may be unbalanced. The electrical stress on some IGBTs is relatively large, which will lead to device damage after long-term operation, and...

AI Technical Summary

Problems solved by technology

[0003] In the IGBT parallel application, due to the inconsistency of the parameters of the IGBT and its driving circuit, the current flowing on each branch in the IGBT parallel circuit may be unbalanced

Part of the IGBT suffers from high electrical stress, which will lead to device damage after long-term operation, and the damage of some IGBT will further lead to the damage of all other IGBTs

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