Polarization-independent power divider based on symmetrical three-waveguide and subwavelength structure
A technology of power divider and sub-wavelength structure, applied in the field of integrated optics, can solve the problems of high insertion loss and reflection loss, high design complexity and power distribution ratio, negative impact on PIC performance, etc., to avoid bending the output waveguide, Effects of reduced insertion loss and high coupling efficiency
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[0044] A silicon-based power divider based on a symmetrical three-waveguide and polarization-independent sub-wavelength structure (such as figure 1 , figure 2 (Shown), the power divider is made of an insulating silicon wafer platform. The bottom layer of the power divider is a silicon-based substrate 8 composed of a standard 6-inch silicon wafer. The upper surface of the silicon-based substrate 8 has a thermally grown 2μm thick buried The oxide layer 9 is made of silicon dioxide material. A silicon waveguide layer 11 is distributed on the upper surface of the buried oxide layer 9, and the silicon waveguide layer 11 is covered with an upper cladding layer 10 composed of silicon dioxide, in which:
[0045] The silicon waveguide layer 11 includes input channel 1, right through channel 2, middle through channel 3, left through channel 4, right output channel 5, left output channel 6, symmetrical three-waveguide directional coupler structure 7, and the materials of all channels All ar...
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