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High-stability bismuth-iodine hybrid light absorber, preparation and application thereof

A light absorber and high stability technology, applied in the field of inorganic-organic hybrid materials, can solve the problems of poor stability and low carrier transport efficiency, and achieve the effect of high stability and excellent photoelectric conversion performance

Active Publication Date: 2019-12-31
UNIV OF JINAN
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the problems of low carrier transport efficiency and poor stability of existing zero-dimensional bismuth halogen-based light absorbers, and adopt cheap BiI 3 and 4-phenylpyridine as raw materials, through in-situ alkylation reaction to generate hydrophobic alkyl cations, thereby synthesizing a one-dimensional chain-like bismuth-iodide hybrid light absorber with excellent stability

Method used

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  • High-stability bismuth-iodine hybrid light absorber, preparation and application thereof
  • High-stability bismuth-iodine hybrid light absorber, preparation and application thereof
  • High-stability bismuth-iodine hybrid light absorber, preparation and application thereof

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Embodiment Construction

[0015] (1) Compound Me4ppi-BiI 4 Synthesis

[0016] 0.158 g BiCl 3 , 0.075 g of KCl and 0.031 g of 4-phenylpyridine were put into the 25 ml polytetrafluoroethylene liner of the inner glass vial, 0.5 ml of HI, 5 ml of methanol and 2 ml of acetonitrile were added, and then the polytetrafluoroethylene Put the gallbladder in a stainless steel reaction kettle, screw it tightly, heat it in an oven at 120 degrees Celsius, and keep it at this temperature for three days, then cool it to room temperature, and get red columnar crystals after treatment, which is the compound Me4ppi-BiI 4 .

[0017] (2) Photoelectrochemical test

[0018] 5 mg of well-ground Me4ppi-Bil 4 The powder was dispersed in 0.3 ml of ethanol, mixed by ball milling for 30 minutes, and then 3.5 microliters of the dispersed solution was dropped onto a 1×1 square centimeter interdigitated electrode, repeated five times, and vacuum-dried at 40 degrees Celsius for four hours to obtain a thin film photoelectric pole, ...

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Abstract

The invention discloses a preparation method and application of a high-stability bismuth-iodine hybrid light absorber Me4ppi-BiI4. The structural formula of the material is Me4ppi-BiI4, wherein Me4ppirepresents methylated 4-phenylpyridine cations, and BiI4 anions in the material are one-dimensional anion chains formed by coordination of trivalent bismuth ions and iodide ions. Bismuth trichloride,4-phenylpyridine, methanol, acetonitrile and hydroiodic acid are selected as the reaction raw materials to synthesize a single crystal of the compound Me4ppi-BiI4. The material can bear for at least35 days and 7 days respectively under a relative humidity of 75% and sunlight and maintain excellent photoelectric response capability, and powder diffraction proves that the phase purity of the compound is maintained under two conditions.

Description

technical field [0001] The invention relates to the field of inorganic-organic hybrid materials, in particular to a highly stable bismuth-iodine hybrid light absorber Me4ppi-BiI 4 The preparation method and application of Me4ppi=methylated 4-phenylpyridine. Background technique [0002] In the past few years, lead-based organometal halide light absorbers such as CH 3 NH 3 wxya 3 (X = Cl, I, Br) photovoltaic research has become one of the hot topics in modern chemistry and materials science. Since Miyasaka and colleagues put CH 3 NH 3 wxya 3 After being incorporated as a sensitizer into dye-sensitized solar cells, the energy conversion efficiency of lead-based organometal halide solar cells has achieved a huge leap from 3.8% to 24% after ten years. This huge performance improvement should be attributed to the sum of its various physical properties, including strong optical absorption, moderate band gap, high defect tolerance, low exciton binding energy, and high carrie...

Claims

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Application Information

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IPC IPC(8): C07D213/20
CPCC07D213/20C07B2200/13
Inventor 赵若愚刘广宁许让栋韦天慧牛鹏飞李村成
Owner UNIV OF JINAN
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