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A Vertical Interconnection Method for Metal Filled Elbows

A technology of metal filling and bending, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of inoperability and filling, and achieve the effect of cost saving

Active Publication Date: 2022-04-12
浙江集迈科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, in practical applications, because the adapter board used as the carrier board needs to be used as a TSV to be used as a Unicom conductive column, and the current equipment that can fill the conductive column can reach a maximum of 200um, and the deeper the hole can only be covered with a metal coating on the hole wall. , cannot fill
In addition, the TSV filling process requires the use of seed layer deposition, metal plating and other processes. These two-step processes can only be used for filling vertical holes, and cannot work for some curved holes.

Method used

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  • A Vertical Interconnection Method for Metal Filled Elbows
  • A Vertical Interconnection Method for Metal Filled Elbows
  • A Vertical Interconnection Method for Metal Filled Elbows

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Embodiment

[0031] Such as Figure 1 to Figure 4 As shown, a method for vertical interconnection of metal-filled elbows specifically includes the following steps:

[0032] 101) Fabrication steps of the adapter plate: the adapter plate includes an upper adapter plate 102 and a lower adapter plate 103; the upper surfaces of the upper adapter plate 102 and the lower adapter plate 103 are both made of TSV by photolithography and dry etching process The hole 101, the diameter of the TSV hole 101 ranges from 1um to 1000um, and the depth ranges from 10um to 1000um. Silicon oxide or silicon nitride is deposited on the upper surface of the upper interposer 102, or an insulating layer is formed by direct thermal oxidation, and the thickness of the insulating layer ranges from 10 nm to 100 um. The seed layer is made on the insulating layer by physical sputtering, magnetron sputtering or evaporation process. The thickness of the seed layer ranges from 1nm to 100um. Its structure can be one layer or ...

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Abstract

The invention discloses a method for vertical interconnection of metal-filled elbows, which specifically includes the following steps: 101) making an adapter plate, 102) injecting metal, and 103) forming; the invention melts the metal at high temperature, and then Under the action of vacuum and high pressure, liquid metal is filled into the curved hole, and after cooling, the metal filling in the curved hole is formed, and at the same time, the step of depositing the seed layer in the groove is avoided, which saves the cost of a metal filled elbow vertical interconnection method.

Description

technical field [0001] The invention relates to the technical field of semiconductors, more specifically, it relates to a method for vertically interconnecting metal-filled bent pipes. Background technique [0002] Microwave and millimeter wave radio frequency integrated circuit technology is the foundation of modern national defense weaponry and Internet industry. Millimeter-wave radio frequency integrated circuits also have huge actual needs and potential markets. [0003] In the context of the post-Moore's Law era, it has become more difficult to increase integration through the traditional way of reducing the size of transistors. The current electronic system is developing in the direction of miniaturization, diversification, and intelligence, and will eventually form a highly integrated and low-cost comprehensive electronic system that integrates multiple functions such as perception, communication, processing, and transmission. The core technology of the multifunctio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/48H01L23/528
CPCH01L21/76802H01L21/76805H01L21/76816H01L21/76877H01L21/4814H01L23/528
Inventor 郁发新冯光建王永河马飞程明芳
Owner 浙江集迈科微电子有限公司