Semiconductor structure detection method and detection device thereof

A detection method and a detection device technology, which are applied in semiconductor/solid-state device testing/measurement, semiconductor/solid-state device manufacturing, image data processing, etc., and can solve problems such as the inability to quantify and analyze the degree of distortion

Active Publication Date: 2020-01-14
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0006] The purpose of the present invention is to provide an improved semiconductor structure detection method and its dete

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  • Semiconductor structure detection method and detection device thereof
  • Semiconductor structure detection method and detection device thereof
  • Semiconductor structure detection method and detection device thereof

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Embodiment Construction

[0041] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0042] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0043] If it is to describe the situation directly on another layer or an...

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Abstract

The present application discloses a semiconductor structure detection method and detection device thereof. The detection method comprises the steps: establishing a relation comparison table between adistortion value and at least one electrical performance parameter; obtaining the cross-sectional image of the semiconductor structure outputted by a transmission electron microscope, including the cross-sectional pattern of at least one hole, wherein the plane of the cross-sectional pattern is perpendicular to the axial direction of the hole; identifying a plurality of boundary points of the holeso as to obtain a plurality of boundary coordinates corresponding to a plurality of boundary points;the ellipse is numerically fitted according to a plurality of boundary coordinates and the long axis and the short axis of the ellipse are obtained; calculating the difference between the long axis and the short axis and taking the difference as the distortion value of the hole; and judging whetherthe electrical performance parameters corresponding to the hole meet the reasonable range according to the relation comparison table and the distortion value of the hole. The detection method takes the difference between the long axis and the short axis of each hole as the characterization parameter of the distortion degree of the hole so as to quantify the distortion degree of the hole and finally achieve the purpose of quantitatively analyzing the influence of the distortion degree on the electrical performance.

Description

technical field [0001] The present invention relates to semiconductor technology, and more specifically, to a method for detecting a semiconductor structure and a detection device thereof. Background technique [0002] With the miniaturization of semiconductor devices, the critical dimensions of semiconductor devices have been reduced to the nanometer level, which means that the critical dimensions will determine the performance of semiconductor devices. Therefore, it is necessary to accurately measure the critical dimensions and grasp the critical dimensions at the nanometer level The degree of change has become an essential link. [0003] In the prior art, measurement tools can be used to measure the general simple shape of semiconductor devices or the single and large critical dimensions of semiconductor devices, but for complex structures with small critical dimensions (such as 3D NAND) Said, the measurement tool in the prior art can not satisfy the need. For example, ...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L21/67G06T7/00G06T7/13
CPCH01L22/12H01L22/24H01L22/14H01L21/67242H01L21/67294H01L21/67288G06T7/0002G06T7/13
Inventor 魏强民卢世峰夏志良
Owner YANGTZE MEMORY TECH CO LTD
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