268 results about "Electronic microscopy" patented technology

The invention relates to the technical field of computer science, in particular to a stamping prediction method based on a multi-machine learning model and an automatic compensation device.The stamping prediction method comprises the steps that firstly, a sheet microstructure and material characteristics are obtained through a transmission electron microscope and an atomic probe tomography technology, and then finite element simulation sampling is conducted; a data set is expanded by using an adaptive algorithm, multiple models are constructed and trained to obtain a final springback prediction model, an automatic compensation device is embedded to realize automatic compensation, and the automatic compensation device covers visual parameter input, embedded springback prediction, springback compensation calculation and an automatic control module. Parameters can be visually input, springback can be accurately predicted, a compensation value can be calculated, and the process can be adjusted. The method aims at solving the problems that in the high-strength plate stamping process, due to springback, the size and shape of a part deviate from the design requirement, and a traditional prediction and compensation technology is insufficient in precision and efficiency.

The invention relates to a transmission electron microscope low-temperature sample rod using a flexible structure to transfer heat. The transmission electron microscope low-temperature sample rod comprises a liquid nitrogen Dewar tank; the sample rod comprises a sample rod body with a front-back through hollow cavity, a heat conduction rod and a flexible heat transfer rope, one end of the heat conduction rod extends into the liquid nitrogen Dewar tank, the other end of the heat conduction rod extends into the sample rod body, one end of the flexible heat transfer rope is wound and fixed on the heat conduction rod, and the other end of the flexible heat transfer rope is wound and fixed on the sample rod body. The other end of the sample rod extends to the outer end of the sample rod body; the sample rod head comprises a sample rod fixing outer frame and a sample rod temperature control part, the sample rod fixing outer frame is connected with the outer end of the sample rod body, the sample rod temperature control part is arranged on the sample rod fixing outer frame, the sample rod temperature control part is connected with the flexible heat transfer rope, and a heating element capable of heating a sample to be tested is further arranged on the sample rod temperature control part. Compared with the prior art, efficient heat conduction can be achieved, meanwhile, the thermal stress influence is reduced, and the temperature stability and the sample position stability are improved.

The invention discloses an in-situ TEM (Transmission Electron Microscope) device sample preparation method based on a suspended thinning and parallel carrying technology, which can be used for preparing in-situ TEM samples of semiconductor two-end devices and three-end devices, and mainly solves the problems of unstable ohm contact, nonuniform thinning, low success rate and high time cost in the prior art. According to the invention, an FIB sample preparation technology is adopted, and stable and reliable ohmic contact between a sample electrode and an MEMS chip electrode is ensured through specific-angle sample extraction, suspended thinning, parallel carrying, circuit breaking treatment and an accurate electrode welding process. According to the sample prepared by the invention, the failure state of a device can be observed in real time under a transmission electron microscope, the sample has the advantages of high sample preparation success rate, good repeatability, stable electrical parameters and wide applicable chip variety, and the reliability and repeatability of in-situ TEM test data are remarkably improved.

The invention provides a contour measurement method, electronic equipment and a storage medium. The method comprises the following steps: acquiring a standard image, a contour of the standard image and an SEM image of a to-be-measured product acquired by a critical dimension scanning electron microscope CD-SEM; adopting a target physical threshold model to extract a target contour of the SEM image; and determining a target edge placement error between the contour of the standard image and the target contour of the SEM image, and generating and outputting a contour measurement result of the to-be-measured product according to the target edge placement error, so as to improve the precision of contour extraction and the accuracy and efficiency of contour measurement.

The invention discloses an image processing method and device, a medium and a computer program product, and relates to the technical field of semiconductor manufacturing. The image processing method comprises the following steps: acquiring target image samples of a plurality of wafer samples through a scanning electron microscope, and obtaining a first contour image label of each target image sample; based on the target image sample, a first contour image result is generated through a generator of a preset image edge model, iteration training is carried out on the preset image edge model through pixel difference loss, adversarial loss and edge supervision loss until a convergence condition is met, and a target image edge model is obtained; the generator of the target image edge model can output an edge contour image based on the target image of the target wafer. Through multi-dimensional constraints of pixel difference loss, edge supervision loss and adversarial loss, the preset image edge model is trained in the direction of generating an actual edge contour, and the accuracy of the edge contour image is improved.

The invention provides a fuzzy knowledge graph construction method related to a wafer manufacturing process, and relates to the technical field of fuzzy knowledge graphs, and the method comprises the steps: employing a three-dimensional convolutional network to extract a spatial defect feature X of a scanning electron microscope image, carrying out the coding of sensor time series data through a bidirectional LSTM, and obtaining a feature set Y, obtaining electrical performance parameters of the wafer based on impedance spectroscopy analysis from the text to obtain a feature set Z; building fuzzy knowledge based on the text to reinforce the feature sets X, Y and Z, building a fuzzy feature set and a time sequence feature set, building a weighted scoring model, and screening a candidate set from the text according to the weighted scoring model; information is extracted from the candidate set, and a tetrad structure G = (entities, relationships, time attributes and fuzzy rules) is constructed; and taking G as input, generating a time sequence fuzzy rule through a recursive reconstruction contribution method, and incrementally updating the knowledge graph. According to the method, the characterization bottleneck of space-time coupling and uncertainty correlation in a traditional method is broken through.

The invention belongs to but is not limited to the technical field of petroleum engineering, and particularly relates to a shale reservoir polymer fracturing fluid retention characteristic analysis method and system, and the method comprises the following steps: S1, carrying out a displacement experiment by using polymer solutions with different molecular weights and concentrations; s2, the retention condition of polymers in the rock core before and after displacement is observed through a micron CT and scanning electron microscope technology; and S3, analyzing the influence of the polymer solutions with different molecular weights and concentrations on the retention characteristics in the shale reservoir. The invention aims to carry out a displacement experiment on the rock core by using polymer solutions with different molecular weights and concentrations, and then observe and compare the polymer solutions of the rock core before and after displacement by using equipment such as a CT scanner and an electron microscope, so as to obtain the retention and migration conditions of the polymer in the hole seam of the rock core. The retention characteristics of fracturing fluid polymer molecules in a microporous structure and a matrix are studied, so that a correct polymer molecular weight range is provided for reservoir transformation, fracturing fluid reservoir damage is reduced, and the fracturing yield increasing effect is finally improved.

In one aspect, a specimen holder includes a first end configured to attach to a cooling device and a second end configured to be inserted into a microscope; a section with a sample tip at the second end; an interface between the first end configured to attach to the cooling device and the section with the sample tip; and an internal thermal connection section configured to be in thermal contact with a cold finger of the cooling device when the specimen holder is attached to the cooling device and extending through the section with the sample tip to the sample tip.

Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

An external additive for toner, wherein the external additive is an organosilicon polymer particle, and defining A (nm) as the number-average particle diameter of primary particles of the external additive measured using a scanning electron microscope, and defining B (nm) as the number-average particle diameter of the external additive measured in accordance with a centrifugal sedimentation method, the A and the B satisfy a following Expression (1):1.5≤B / A≤3.0  (1).

The disclosure relates to air transfer free of solid state batteries and electrical testing of solid state batteries in scanning electron microscopes. In one embodiment, an apparatus includes a sample stage including a base member and a sample support assembly coupled to the base member, where the sample support assembly includes a bracket having opposing first and second bracket portions, the first holder portion and the second holder portion are configured to compress a sample within the holder receiving portion, wherein the base member is configured to engage a sample stage within a microscope chamber. A method includes securing a sample stage in a microscope chamber and charging and / or discharging the sample at least partially through an electrical coupling in the chamber.

The invention relates to the technical field of biosensor detection, in particular to a food grease safety detection device based on a biosensor. The detection device comprises a biosensor and an electron microscope, and further comprises a built-in sampling device, and the sampling device comprises a sampling tank, a mounting column, a feeding pipe, a pressurizing assembly and a cleaning assembly; a spiral heat supply pipe is arranged in the side wall of the mounting column, and a discharge pipe is vertically arranged at the bottom; the sampling tank is composed of an upper tank and a lower tank which are in threaded connection, a first filtering disc is mounted in the upper tank, a second filtering disc is mounted in the lower tank, a mounting disc is arranged between the upper tank and the lower tank, a first-stage pressurizing space is formed between the first filtering disc and the upper tank, and a second-stage pressurizing space is formed between the center frame and the second filtering disc; a water level detection mechanism is arranged beside the second filter disc; the outer side of the feeding pipe is sleeved with a heat supply sleeve. Efficient layering, precise temperature control and intelligent cleaning of the grease food are achieved, the detection sensitivity is improved, the maintenance cost is reduced, and the device is suitable for multi-scene rapid detection requirements.

The invention discloses a wafer scanning system, a wafer scanning method and electronic equipment, and relates to the technical field of wafer scanning. The wafer scanning system comprises a workpiece table controller which is used for controlling a workpiece table to start to move from an initial position of a preset scanning area; the positioning module is used for collecting a position signal of the workpiece table in real time under the condition that the workpiece table starts to move from the initial position of the preset scanning area, and synchronously sending the position signal to the workpiece table controller and the scanning electron microscope controller of the scanning electron microscope; the workpiece table controller is also used for controlling the movement of the workpiece table according to the position signal; and the scanning electron microscope controller is used for controlling the scanning action of the scanning electron microscope according to the position signal. According to the scheme, the position signals of the workpiece tables are accurately distributed, cooperative control is achieved, it is ensured that the workpiece tables and the scanning electron microscope work synchronously in the scanning process, and therefore the scanning precision is effectively improved.

The invention provides a wafer defect detection method and device, and relates to the technical field of semiconductors, and the wafer defect detection method comprises the steps: carrying out the laser scanning of a wafer, and obtaining the first position information and the first size information of a defect on the wafer; performing optical scanning on the wafer by using an optical microscope and performing electronic scanning on the wafer by using a scanning electron microscope according to the first position information and the first size information to obtain second position information and second size information of the defect on the wafer; and taking the second position information and the second size information as positioning detection information of defects on the wafer. According to the embodiment of the invention, a combined scanning mode of laser scanning, optical scanning and electronic scanning is used for carrying out positioning detection on the wafer defects, so that missing detection and false detection of the defects are avoided, and the accuracy of wafer defect detection is improved.

A method includes extracting first feature data by applying a backbone network of a machine learning model to a layout image representing a design for a target pattern, applying a hotspot segmentation network of the machine learning model to the first feature data, the hotspot segmentation network configured to generate a hotspot map representing a hotspot area of the layout image corresponding to a fault, obtaining, from the hotspot segmentation network, second feature data, and generating a scanning electron microscope (SEM) image of a wafer by applying an SEM image generation network of the machine learning model to the first feature data and the second feature data.

Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (6), a GaN layer (4) that is provided on the incident side to the sapphire substrate (6) and includes GaN, a quantum well structure (3) provided on the incident side to the GaN layer (4), and a conductive layer (2) provided on the incident side to the quantum well structure (3), wherein a plurality of emitting layers (21) including InGaN and a plurality of barrier layers (22) including GaN are alternatively stacked in the quantum well structure (3), and an oxygen-containing layer (23) including oxygen is provided between the quantum well structure (3) and the conductive layer (2).

The invention discloses a method for measuring the thickness of a semiconductor epitaxial structure, and relates to the technical field of semiconductor laser detection. According to the method, a clean, flat and pollution-free epitaxial end face is obtained through scribing cleavage or cutting or fracture treatment, the end face is corroded by adopting components containing acid, oxide and the like, and due to the fact that the components or doping concentrations of epitaxial layers are different, the rates of chemical reactions between the epitaxial layers and a mixed solution are different; finally, the end face of the epitaxial layer corroded by the mixed solution is in a stepped shape under a scanning electron microscope, and the boundary of each epitaxial layer can be obviously distinguished through the shape, so that the thickness of each epitaxial layer is accurately measured, the problems of complicated operation, high cost, low efficiency and insufficient structural analysis capability in the prior art are solved, and the measurement accuracy is improved. And an efficient and accurate solution is provided for measuring the thickness of the epitaxial layer.

The embodiment of the present disclosure discloses a bearing assembly for testing sample and an electron microscope system, the bearing assembly comprises: a main body; a contact part for supporting the testing sample and connected to the main body; the contact part comprises a plurality of recesses recessed towards the main body, the recesses are used for accommodating the testing sample; the recesses comprise a plurality of abutting surfaces; wherein at least two of the abutting surfaces are used for supporting the testing sample; and adjacent two of the abutting surfaces are connected and form an included angle.

To provide an epoxy resin hardener or the like that imparts superior stability and reactivity to an epoxy resin composition mixed with a low-molecular-weight epoxy compound, a solvent, or a low-molecular-weight acryl compound, and that enables provision of superior appearance even in fine regions when curing an epoxy resin composition containing a filler.SOLUTION: An epoxy resin hardener comprises: a core (A) containing a nitrogen-containing compound; and a layer (B) that covers the core (A). In the epoxy resin hardener, after staining the epoxy resin hardener with ruthenium tetroxide and osmium tetroxide, observing it via transmission electron microscopy, and deriving a luminance graph through image processing, the inside of the layer (B) includes a region having luminance α, wherein the luminance α is higher than a luminance β at the outermost surface of the layer (B) and a luminance γ at the boundary between the layer (B) and the core (A).SELECTED DRAWING: None

Systems for determining a scanner aerial image from a mask inspection image include a computer processor configured to receive the mask inspection image, wherein the mask inspection image has been generated by a mask inspection machine; and a computer processor configured to generate the scanner aerial image from the mask inspection image using a neural network. Systems include a computer processor configured to train a neural network with a set of images, such as with a simulated scanner aerial image and another image selected from a simulated mask inspection image, a simulated Critical Dimension Scanning Electron Microscope (CD-SEM) image, a simulated scanner emulator image and a simulated actinic mask inspection image.

The present invention relates to the technical field of asphalt material data processing, and in particular to a method for establishing an asphalt material database management system. The method comprises the following steps: using a scanning electron microscope, an atomic force microscope, and an X-ray tomography device to perform imaging scans on asphalt material samples of different gradations, different modifier types, and different aging states, respectively, to obtain multi-scale asphalt material microscopic image data; analyzing the microscopic characteristics of the material samples based on the pre-processed multi-scale asphalt material microscopic image data to obtain asphalt material microscopic characteristic parameters; and creating an asphalt material database management system for the asphalt material microscopic characteristic parameters based on a relational database management system. The present invention creates an asphalt material database for multi-dimensional query by efficiently associating the microstructure and macroscopic properties of asphalt materials, thereby achieving efficient storage and rapid query of asphalt material data.

This invention relates to the field of battery technology and discloses a method for forming an SEI film in a battery, comprising the following steps: Step 1, surface pretreatment; Step 2, initial linear scanning; Step 3, SEI film reforming; Step 4, final linear scanning; Step 5, real-time monitoring; and Step 6, real-time adjustment. This invention ensures uniform SEI film formation on the electrode surface through a series of precise steps and technical measures during the SEI film formation process in the battery. A multi-segment scanning strategy is employed for the initial linear scanning, gradually increasing the voltage and performing multiple scans to effectively control the initial formation and uniformity of the SEI film. Quality inspection is performed using a scanning electron microscope (SEM), and feedback adjustments are made based on the inspection results to further ensure uniform SEI film formation and high performance. This achieves the beneficial effect of improving SEI film uniformity and ensuring uniform formation of the SEI film in different regions.

To provide a silicon electrode plate for a plasma processing apparatus.SOLUTION: A silicon electrode plate for a plasma processing apparatus comprises: a plate central part 31 and a plate peripheral part 32 provided around the central part. The silicon electrode plate includes: a first surface 301 which is circularly formed by one surface 32A of the plate peripheral part 32 and one surface 31A of the plate central part 31 provided with an inlet 111 of a gas flow path 11, arranged flush with each other; a second surface 302 which is circularly formed by the other surface 31B of the plate central part 31, and provided with an outlet 112 of the gas flow path 11; and an annular surface 303 which is annularly formed by the other surface 32B of the plate peripheral part 32, located opposite the first surface 301. In an observation of ten areas of a top surface cross-section of the annular surface 303 under a scanning electron microscope with a field of view of 12.80 μm×9.60 μm, the total number of microcracks with a size of 1.0 μm or more is two or fewer, or the total number of foreign substances with a size of 1.0 μm or more is two or fewer. Furthermore, the average value of the arithmetic mean roughness Ra of the annular surface 303 is 0.40 μm or less.SELECTED DRAWING: Figure 3

The polymer particle group containing polyorganosiloxane involved in this invention comprises a polymer (A) containing polyorganosiloxane (A1) and a first vinyl polymer (A2) and a second vinyl polymer (B). When the cross-section of a resin sheet obtained by dispersing the polymer particle group containing polyorganosiloxane in a resin is observed with a transmission electron microscope, the diameter of each particle of the polymer particle group containing polyorganosiloxane is set to L, and the maximum length of the polyorganosiloxane (A1) region is set to M. The ratio of the number of particles satisfying the following formula (1) is less than 60%. M / L>0.1···(1).

The invention discloses a cutting force measuring method for atomic precision machining, which belongs to the field of atomic precision machining and comprises the following steps of: 1, determining the elastic rigidity of an atomic force microscope probe; step 2, preprocessing an atomic force microscope probe; step 3, preparing a cut sample; fourthly, the atomic-scale sharp diamond cutter is prepared; step 5, installing the sheet sample on an X-Nano multi-degree-of-freedom in-situ transmission electron microscope sample rod; 6, measuring the cutting force by using an X-Nano multi-degree-of-freedom nano control technology; and 7, calculating the displacement of the diamond cutter and the sheet sample in the x direction under different frames, and drawing a relation curve of the cutting stroke and the cutting force. According to the invention, the cutting force measurement of atomic precision processing is realized under the TEM based on the AFM probe, the cutting force measurement range can be flexibly adjusted according to the amplification factor of the TEM and the elastic rigidity of the AFM probe, and the method is suitable for the cutting force measurement of various materials.

The present invention includes a positive electrode active material for a secondary battery, comprising a composite metal hydroxide precursor represented by Chemical Formula (1) below: wherein the precursor includes a secondary particle composed of a plurality of primary particles; wherein each primary particle is formed as a bundle of micro primary particles; wherein, when observed via a transmission electron microscope, the major axis direction of the micro primary particles coincides with the major axis direction of the primary particles; and wherein each micro primary particle has a thickness of about 1 nm to about 50 nm.

The invention discloses a method and device for checking chip sorting accuracy, electronic equipment and a storage medium, and belongs to the technical field of semiconductors, and the method comprises the steps: building a checking model which is equal to a wafer object in proportion according to the actual sizes of wafers and chips and the distance between the chips; reading CP data of the chip; displaying the position of each chip in the test model according to the chip coordinate information, and displaying a Bin Code character at the corresponding coordinate position according to the chip Bin Code; setting visual parameters of the inspection model, wherein the visual parameters comprise configuration of different display colors according to Bin Code types and setting of transparency of the inspection model; a wafer object image is obtained through an electron microscope, and the lens magnification of the electron microscope is adjusted, so that the wafer object image and the inspection model have the same size; and carrying out overlapping comparison on the adjusted wafer object image and the inspection model, and inspecting the accuracy of chip sorting through a comparison result. The technical effects that the efficiency can be improved, the cost is reduced, and errors are not prone to occurring are achieved.

A system to perform image processing and segmentation includes a memory configured to store an image of a nanoparticle. The system also includes a processor operatively coupled to the memory. The processor is configured to identify a background of the image, where the background includes one or more portions of the image that do not depict the nanoparticle. The processor removes the background from the image with a mask. The processor applies clustering to the image to identify regions of interest in the image. The processor also identifies acquisition boxes in each of the identified regions of interest.

This invention provides solid substrates for promoting cell or tissue growth or restored function, which solid substrate is characterized by a specific fluid uptake capacity value of at least 75%, which specific fluid uptake capacity value is determined by establishing a spontaneous fluid uptake value divided by a total fluid uptake value. This invention also provides solid substrates for promoting cell or tissue growth or restored function, which solid substrate is characterized by having a contact angle value of less than 60 degrees, when in contact with a fluid. This invention also provides solid substrates for promoting cell or tissue growth or restored function, which said substrate is characterized by a substantial surface roughness (Ra) as measured by scanning electron microscopy or atomic force microscopy. The invention also provides for processes for selection of an optimized coral-based solid substrate for promoting cell or tissue growth or restored function and applications of the same.