Unlock instant, AI-driven research and patent intelligence for your innovation.

Power-down protection circuit for chemical sensor

A chemical sensor and power-down protection technology, which is applied in the direction of emergency protection circuit devices and electrical components, can solve the problems of increasing peripheral circuits and increasing circuit costs, and achieve the effect of reducing external devices and reducing costs

Active Publication Date: 2020-02-14
SG MICRO
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inventor found that the disadvantage of this solution is that the peripheral circuits must be increased, thereby increasing the circuit cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power-down protection circuit for chemical sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] Below with the accompanying drawings ( figure 1 ) to illustrate the present invention.

[0015] figure 1 It is a schematic diagram of the structure and principle of the chemical sensor power-down protection circuit implemented in the present invention. Such as figure 1 As shown, the chemical sensor power-down protection circuit includes an operational amplifier circuit board, a first operational amplifier OP1 is arranged in the operational amplifier circuit board, and the positive input terminal INP (+) of the first operational amplifier OP1 is connected to the ground terminal , the negative input terminal INN(-) of the first operational amplifier OP1 is the access terminal of the positive terminal WE of the sensor, and the negative input terminal (-) of the first operational amplifier OP1 is connected to the drain of the first NMOS transistor M1 pole, the source of the first NMOS transistor M1 is connected to the source of the second NMOS transistor M2, the drain of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a power-down protection circuit for a chemical sensor, which can control the formation of a power-down short-circuit state or a power-on disconnection state between the drain electrode ends of two NMOS transistors through a combination of the two NMOS transistors and a charge pump which are connected with each other through source electrodes, so that the short-circuit protection of the chemical sensor when the circuit is powered down is realized, and polarity damage of the chemical sensor due to the excessively high voltage of two poles is avoided. The power-down protection circuit is characterized by comprising an operational amplifier circuit board, wherein the operational amplifier circuit board is internally provided with a first operational amplifier, the positive input end of the first operational amplifier is connected with a grounding end, the negative input end of the first operational amplifier is an access end of the positive electrode end of the sensor, the negative input end of the first operational amplifier is connected with the drain electrode of the first NMOS transistor, the source electrode of the first NMOS transistor is connected with the source electrode of the second NMOS transistor, the drain electrode of the second NMOS transistor is an access end of the negative electrode end of the sensor, the grid electrode of the first NMOS transistor and the grid electrode of the second NMOS transistor are respectively connected with a charge pump, and the charge pump is connected with an oscillator.

Description

technical field [0001] The invention relates to a power-down protection technology for sensors, in particular to a chemical sensor power-down protection circuit, which can control the drain terminal of the two NMOS tubes through the combination of two NMOS tubes interconnected at the source and a charge pump. A power-down short-circuit state or a power-on disconnection state is formed between them, so as to realize the short-circuit protection of the chemical sensor when the circuit is powered off, so as to avoid polarization damage to the chemical sensor. Background technique [0002] At present, the two output terminals of the carbon monoxide sensor (CO sensor) should be short-circuited after the circuit is powered off, that is, the positive terminal WE of the sensor is short-circuited with the negative terminal CE of the sensor, so as to ensure that the sensor will not generate extreme voltage due to the voltage difference between the two poles exceeding the rated voltage....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02H7/20
CPCH02H7/20
Inventor 孙德臣张海冰张利地
Owner SG MICRO