A tsv via hole supporting multiple electrical connections

Abstract

The invention relates to a TSV through hole supporting multipath electrical connection. The TSV through hole comprises a substrate which is provided with an annular through hole, and the interior of the through hole is provided with an insulating isolation plate which enables the through hole to be isolated into a first cavity and a second cavity. The structure supports multipath electrical connection, the TSV through hole can transmit multipath different electrical signals through the same through hole, the insulation isolation plate layer is arranged to enable the electrical signals to be mutually insulated, mutual interference between the electrical signals is avoided and the quality of the electrical signals is ensured. Besides, multiple paths of electrical signals are transmitted in acentralized mode, the number of through holes formed in the substrate can be reduced to a large extent, the stability of the three-dimensional integrated circuit system can be improved and heat dissipation of the space between the substrates is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor packaging, and in particular relates to a TSV through hole supporting multiple electrical connections. Background technique [0002] With the increasing scale of system integrated chips, three-dimensional integration technology can effectively reduce the circuit board area occupied by microsystem products in the horizontal direction, and at the same time reduce the length of interconnection lines and signal delays, making the system small Advantages of size, high performance, and low power consumption. [0003] TSV (through silicon via) technology is the abbreviation of through-silicon via technology, generally referred to as through-silicon via technology, and is a technical solution for interconnection of stacked chips in three-dimensional integrated circuits. TSV technology has the advantages of small volume, high density, high integration, and small interconnection delay. It can replace...

AI Technical Summary

Problems solved by technology

[0008] The shape of traditional TSV through holes is mostly round holes, and the holes will be filled with connection materials such as copper, etc. High-density packaging will also make the heat dissipation effect between the substrates smaller

And a through hole can only connect two devices on the upper and lower substrates, multiple devices need multiple separate through holes

Images