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Construction and decoding method of multiple permutation codes based on matrix representation in flash memory

A technology of matrix representation and construction method, which is applied in the field of construction and decoding of multiple permutation codes, and can solve the problems of complex decoding method and low code rate of multiple permutation codes.

Active Publication Date: 2020-03-27
XIDIAN UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to address the above-mentioned deficiencies in the prior art, and propose a structure and decoding method of multiple replacement codes based on matrix representation in flash memory, which is used to solve the problem of low code rate of multiple replacement codes and complicated decoding methods. question

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  • Construction and decoding method of multiple permutation codes based on matrix representation in flash memory
  • Construction and decoding method of multiple permutation codes based on matrix representation in flash memory
  • Construction and decoding method of multiple permutation codes based on matrix representation in flash memory

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Embodiment Construction

[0056] The specific steps of the present invention will be further described below in conjunction with the drawings and embodiments.

[0057] Reference attached figure 1 The specific steps of the method for constructing multiple replacement codes based on matrix representation in a flash memory of the present invention are further described.

[0058] Step 1. Use the following replacement code construction formula to construct a Levenshtein replacement code that corrects 1 symbol without changing the SID error;

[0059]

[0060] among them, Indicates that the linear congruence equation with code length n is a Levenshtein replacement code that corrects 1 symbol and does not change the SID error. The value range of n is [1,∞), and the value range of a is {0,1 ,...,N-1}, σ represents a permutation whose length is equal to the code length n, ∈ represents a symbol, Represents the set of all permutations on the set {1,2,...,n},: represents The permutation σ that satisfies certain condit...

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Abstract

The invention discloses a construction and decoding method of multiple permutation codes based on matrix representation in a flash memory. The construction steps of multiple permutation codes are that: constructing a permutation code for correcting an SID error; constructing a permutation code for correcting one PID error; interweaving the permutation codewords to construct multiple permutation codewords; and interweaving the permutation codewords to construct multiple permutation codewords. The decoding method of the multiple permutation codes comprises the following steps: generating a unitstate vector in a flash memory; extracting a unit state vector from the flash memory; and judging whether a single BUD error occurs or not, if the single BUD error does not occur, demodulating the state vector matrix of the unit line by line to obtain a multi-permutation codeword matrix, otherwise, obtaining permutation codewords suffering from the 1-PID error, then recovering the permutation codewords through signature, and finally arranging the permutation codewords line by line to obtain the multi-permutation codeword matrix. According to the construction and decoding method of multiple permutation codes, the code rate of the multiple permutation code for correcting the single BUD error is improved, and the decoding method is simplified.

Description

Technical field [0001] The present invention belongs to the field of computer science and technology, and further relates to a method for constructing and decoding multiple permutation codes based on matrix representation in flash memory in the technical field of flash memory channel coding. The present invention can be used to construct multiple replacement codes for correcting a single burst unstable deletion BUD (burst unstable deletion) error in the flash memory, and realize the decoding of the constructed multiple replacement codes to correct a single BUD error. Background technique [0002] As the storage capacity of MLC-type flash memory chips continues to grow and the package size continues to shrink, problems such as read / write interference, charge leakage, inter-cell interference, and data retention noise have caused the data stored in the flash memory to be damaged, resulting in flashing The reliability problem of the storage system is more prominent. Using the relati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10G11C29/42H03M13/27
CPCG06F11/1068G11C29/42H03M13/2707
Inventor 慕建君管荣鑫韩辉焦晓鹏赵展展马国臣
Owner XIDIAN UNIV
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