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The Construction and Decoding Method of Multiple Permutation Codes Based on Matrix Representation in Flash Memory

A technology of matrix representation and construction method, which is applied in the construction and decoding fields of multiple replacement codes, can solve the problems of complex decoding method and low code rate of multiple replacement codes, simplify the decoding method, increase the number of codewords, improve The effect of bit rate

Active Publication Date: 2021-06-25
XIDIAN UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to address the above-mentioned deficiencies in the prior art, and propose a structure and decoding method of multiple replacement codes based on matrix representation in flash memory, which is used to solve the problem of low code rate of multiple replacement codes and complicated decoding methods. question

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  • The Construction and Decoding Method of Multiple Permutation Codes Based on Matrix Representation in Flash Memory
  • The Construction and Decoding Method of Multiple Permutation Codes Based on Matrix Representation in Flash Memory
  • The Construction and Decoding Method of Multiple Permutation Codes Based on Matrix Representation in Flash Memory

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Embodiment Construction

[0056] The specific steps of the present invention will be further described below in conjunction with the drawings and embodiments.

[0057] Refer to attached figure 1 , to further describe the specific steps of a method for constructing multiple replacement codes based on matrix representation in the flash memory of the present invention.

[0058] Step 1, use the following permutation code construction formula to construct a Levenshtein permutation code that corrects one symbol unchanged and deletes the SID error;

[0059]

[0060] in, Indicates that the linear congruence equation with a code length of n is a Levenshtein permutation code that corrects 1 symbol unchanged and deletes SID errors. The value range of n is [1,∞), and the value range of a is {0,1 ,...,n-1}, σ represents a permutation whose length is equal to the code length n, ∈ represents a symbol, Indicates the set of all permutations on the set {1,2,...,n}, : means The permutation σ that satisfies cert...

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Abstract

The invention discloses a construction and decoding method of a multi-replacement code based on matrix representation in a flash memory. The construction steps of the multi-replacement code are: constructing a replacement code for correcting one SID error; constructing a replacement code for correcting one PID error; interleaving The permutation codeword constructs multiple permutation codewords; the interleaved permutation code constructs multiple permutation codes. The steps of the decoding method of multiple replacement codes are: generate the cell state vector in the flash memory; extract the cell state vector from the flash memory; judge whether a single BUD error occurs, and if not, demodulate the cell state vector matrix row by row to obtain multiple replacement codes word matrix, otherwise the permutation codeword suffering from 1-PID error is obtained, and then the permutation codeword is restored by signing, and finally the permutation codeword is arranged row by row to obtain multiple permutation codeword matrices. The invention improves the code rate of multiple replacement codes for correcting single BUD errors, and simplifies its decoding method.

Description

technical field [0001] The present invention belongs to the field of computer science and technology, and further relates to the construction and decoding method of a multi-replacement code based on matrix representation in flash memory in the field of flash memory channel coding technology. The invention can be used to construct multiple replacement codes for correcting a single burst unstable deletion BUD (burst unstable deletion) error in flash memory, and realize decoding of the constructed multiple replacement codes for correcting a single BUD error. Background technique [0002] As the storage capacity of MLC-type flash memory chips continues to increase and the package size continues to shrink, problems such as read / write interference, charge leakage, inter-cell interference, and data retention noise will damage the data stored in the flash memory, resulting in flash memory. The reliability problem of the storage system is more prominent. Using the relative value of ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/10G11C29/42H03M13/27
CPCG06F11/1068G11C29/42H03M13/2707
Inventor 慕建君管荣鑫韩辉焦晓鹏赵展展马国臣
Owner XIDIAN UNIV
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